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參數(shù)資料
| 型號(hào)： | GP30D/51 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 289K |
| 代理商： | GP30D/51 |
GP30A thru GP30M
Vishay General Semiconductor
Document Number 88640
13-Sep-05
www.vishay.com
1
DO-201AD
P
a
t
e
n
t
e
d
*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
Glass Passivated Junction Plastic Rectifiers
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
3.0 A
50 V to 1000 V
125 A
5.0 μA
1.2 V, 1.1 V
175 °C
Features
Superectifier structure for High Reliability
condition
Cavity-free glass-passivated junction
Low leakage current, typical I
R
less than 0.1μA
Low forward voltage drop
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high voltage rectification of power supply,
inverters, converters, freewheeling diodes and snub-
ber circuit application
Mechanical Data
Case:
DO-201AD, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
GP30A GP30B GP30D GP30G GP30J GP30K GP30M Unit
50
100
200
400
Maximum repetitive peak reverse voltage
600
800
1000
V
Maximum RMS voltage
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
50
100
200
400
600
800
1000
V
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at T
A
= 55 °C
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Maximum full load reverse current, full cycle average
0.375" (9.5 mm) lead length at T
A
= 55 °C
Operating junction and storage temperature range
3.0
A
I
FSM
125
A
I
R(AV)
100
μA
T
J
, T
STG
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GP30K/62 | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
| GP30G/65-E3 | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD |
| GP30J/58-E3 | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
| GP30M/56-E3 | 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD |
| GPBC1001-G | 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GP30D-E3/1 | 功能描述:整流器 3.0 Amp 200 Volt 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| GP30D-E3/23 | 功能描述:整流器 3.0 Amp 200 Volt 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| GP30D-E3/4 | 功能描述:整流器 3.0 Amp 200 Volt 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| GP30D-E3/51 | 功能描述:整流器 3.0 Amp 200 Volt 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| GP30D-E3/54 | 功能描述:整流器 200 Volt 3.0 Amp 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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