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參數(shù)資料
| 型號(hào)： | GP2S27TJ000F |
| 廠商： | Sharp Corporation |
| 英文描述： | SMT, Detecting Distance : 0.7mm Phototransistor Output, Compact Refl ective Photointerrupter |
| 中文描述： | 表面貼裝，檢測距離：0.7毫米光電晶體管輸出，緊湊Refl ective光電斷路器 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 183K |
| 代理商： | GP2S27TJ000F |
4
Sheet No.: D3-A01901EN
GP2S27J0000F Series
■
Absolute Maximum Ratings
■
Electro-optical Characteristics
(T
a
=
25
C)
Unit
mA
V
mW
V
V
mA
mW
mW
C
C
C
Parameter
Symbol
I
F
V
R
P
V
CEO
V
ECO
I
C
P
C
P
tot
T
opr
T
stg
T
sol
Rating
50
6
75
35
6
20
75
100
25 to
+
85
40 to
+
100
260
Input
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
1
Soldering temperature
Output
1 For 5s or less
(T
a
=
25
C)
Unit
V
μ
A
nA
μ
A
Parameter
Symbol
V
F
I
R
I
CEO
I
C
t
r
t
f
I
LEAK
Condition
I
F
=
20mA
V
R
=
6V
V
CE
=
20V
I
F
=
4mA, V
CE
=
2V
V
CE
=
2V, I
C
=
100
μ
A,
R
L
=
1k
Ω
, d
=
1mm
I
F
=
4mA, V
CE
=
2V
MIN.
TYP.
1.2
MAX.
1.4
10
100
120
100
100
100
Input
Forward voltage
Reverse current
20
1
45
20
20
Output Collector dark current
2
Collector Current
Transfer
charac-
teristics
Response time
Rise time
Fall time
μ
s
3
Leak current
nA
2 The condition and arrangement of the re
fl
ective object are shown below.
The rank splitting of collector current (I
C
) shall be executed according to the table below.
Rank
Collector current, I
C
[
μ
A]
(I
F
=
4mA, V
CE
=
2V)
Package oleeve color
A
20 to 42
Yellow
B
34 to 71
Transparent
C
58 to 120
Green
3 Without re
fl
ective object.
0.5mm
0.5mm
Soldering area:
The hatched area more than
0.5mm away from the lower
edge of package as shown
in the
fi
gure below.
●
Test Condition and Arrangement for Collector Current
d
=
1mm glass plate
Al evaporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GP2S27TJ00F | 制造商:Sharp Microelectronics Corporation 功能描述: |
| GP2S28 | 功能描述:光學(xué)開關(guān)（反射型，光電晶體管輸出） Photointerrupter 3-7mm Focal Length RoHS:否 制造商:Fairchild Semiconductor 感應(yīng)距離:1 mm 輸出設(shè)備:Phototransistor 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電壓:1.2 V 反向電壓:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 安裝風(fēng)格:SMD/SMT 封裝:Reel |
| GP2S28J0000F | 制造商:Sharp Microelectronics Corporation 功能描述:PHOTOINTERRUPTER REFLECTIVE PHOTOTRANSISTOR 4PIN - Bulk |
| GP2S29 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Long Focal Distance, Reflective Type Photointerrupter |
| GP2S30 | 制造商:Sharp Microelectronics Corporation 功能描述: |
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