參數(shù)資料
型號(hào): GP2401ESM18
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 功率晶體管
英文描述: Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
中文描述: 2400 A, 1800 V, N-CHANNEL IGBT
文件頁數(shù): 6/9頁
文件大?。?/td> 152K
代理商: GP2401ESM18
GP2401ESM18
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 10 Transient thermal impedance
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig.9 Forward bias safe operating area
0
600
1200
1800
2400
3000
3600
4200
4800
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, V
F
- (V)
F
F
T
j
= 125
C
T
j
= 25
C
0
1000
2000
3000
4000
5000
6000
0
400
800
1200
1600
2000
Collector-emitter voltage, V
ce
- (V)
C
C
T
case
= 125
C
V
ge
=
±
15V
R
g(off)
= 2.2
1
10
100
1000
10000
1
10
Collector emitter voltage, V
ce
- (V)
100
1000
10000
C
C
I
C max
(DC)
t
p
= 1ms
t
p
= 100
μ
s
t
p
= 50
μ
s
0.1
1
10
100
1
10
1000
100
10000
Pulse width, t
p
- (ms)
T
t
C
Diode
Transistor
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