參數(shù)資料
型號(hào): GP1600FSM18
廠商: DYNEX SEMICONDUCTOR LTD
元件分類(lèi): 功率晶體管
英文描述: Hi-Reliability Single Switch IGBT Module
中文描述: 1600 A, 1800 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 7/10頁(yè)
文件大小: 139K
代理商: GP1600FSM18
GP1600FSM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/10
Fig.13 Diode typical forward characteristics
Fig.14 Reverse bias safe operating area
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
0
400
800
1200
1600
2000
2400
2800
3200
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, V
F
- (V)
F
F
T
j
= 125
C
T
j
= 25
C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
0
200
400
600
800
1000
1200
Collector-emitter voltage, V
CE
- (V)
C
C
Conditions:
V
GE
=
±
15V
R
g
= 3.3
T
case
= 125
C
1
10
100
1000
10000
1
10
100
1000
10000
Collector-emitter voltage, V
ce
- (V)
C
C
I
C
max. (single pulse)
I
C
max DC(coninuous
t
p
= 1ms
100
μ
s
50
μ
s
0.1
0.001
1
10
100
0.01
0.1
1
10
Pulse width, t
p
- (s)
T
t
C
Transistor
Diode
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