參數(shù)資料
型號: GP1200FSM18
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 功率晶體管
英文描述: Hi-Reliability Single Switch IGBT Module
中文描述: 1200 A, 1800 V, N-CHANNEL IGBT
文件頁數(shù): 4/9頁
文件大小: 150K
代理商: GP1200FSM18
GP1200ESM33
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
μ
s
μ
s
J
μ
s
μ
s
J
μ
C
A
J
Max.
-
-
-
-
-
-
-
-
-
Typ.
3.2
0.9
1.6
1.1
0.4
1.6
600
1200
0.7
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
±
15V
V
CE
= 1800V
R
G(ON)
= 1.8
, R
G(OFF)
= 3.3
C
GE
= 660nF,
L ~ 90nH
I
F
= 1200A, V
R
= 1800V,
dI
F
/dt = 5500A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
μ
s
μ
s
J
μ
s
μ
s
J
μ
C
A
J
Max.
-
-
-
-
-
-
-
-
-
Typ.
3.4
1.5
2.4
1.1
0.5
2.3
1000
1300
1.1
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
±
15V
V
CE
= 1800V
R
G(ON)
= 1.8
, R
G(OFF)
= 3.3
C
GE
= 660nF,
L ~ 90nH
I
F
= 1200A, V
R
= 1800V,
dI
F
/dt = 4500A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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