參數(shù)資料
型號(hào): GP1200ESM33
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 功率晶體管
英文描述: High Reliability Single Switch IGBT Module Advance Information
中文描述: 1200 A, 3300 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 150K
代理商: GP1200ESM33
GP1200ESM33
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig.7 Forward bias safe operating area
Fig.8 Transient thermal impedance
Fig.9 DC current rating vs case temperature
Fig.10 Typical input capacitance
1
10
100
1000
10000
1
10
Collector-emitter voltage, V
ce
- (V)
100
1000
10000
C
C
I
C
max. (single pulse)
I
C
ma.DC(oninuou)
t
p
=1m
t
p
= 100
μ
s
Conditions:
T
vj
= 125
C, T
case
= 80
C
0.1
0.001
1
10
100
0.01
1
0.1
10
Pulse width, t
p
- (ms)
T
t
°
C
Diode
Transistor
0
200
400
600
800
1000
1400
1600
1800
D
C
2000
2200
1200
2400
0
20
40
60
80
100
120
140
160
Case temperature, T
case
- (
C)
200
240
280
320
360
400
220
260
300
340
380
0
10
20
30
40
50
60
Collector-emitter voltage, V
CE
- (V)
I
i
T
vj
= 25
C, V
= 25V
V
GE
= 0V, f = 1MHz
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