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參數(shù)資料
| 型號： | GN8061 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 其它接口 |
| 英文描述： | GaAs IC |
| 中文描述： | SPECIALTY INTERFACE CIRCUIT, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 79K |
| 代理商： | GN8061 |
GaAs MMICs
GN8061
I
Block Diagram
I
Caution for Handling
1) The recommended V
IN
voltage is 2.5 to 3V for [H] and
0 to 0.4V for [L].
2) Do not apply V
IN
while the power supply is OFF.
3) For the current source to be connected to the V
IP
pin,
use a Si bipolar transistor as shown in the circuit dia-
gram.
(Example: 2SD874)
To connect a resistor to the emitter or collector, use a
resistor of a few ohm. The use of higher resistor may
cause large change in the voltage at the V
IP
pin, and
may make the output waveform distortion. (See the pulse
output current control example).
To use another current control circuit, set so that the V
IP
pin voltage becomes around 2V.
4) When mounting, minimize the connection distance be-
tween the semiconductor laser and IC, and use the chip
parts (C, R) of less parasitic effects.
5) Attention to damage by the power surge (see the ex-
ample connection of the pin protection circuit).
During handling, take care to ground the human body
and solder iron tip.
6) The current value of the current source connected to the
V
IP
pin should be zero to protect the semiconductor la-
ser when the power supply is turned ON and OFF.
When the power supply is ON, make V
SS
to rise earlier
than V
DD
. When the power supply is OFF, make V
DD
to
fall earlier than V
SS
. When V
DD
= 5V, V
SS
= 0 even
transitionary, the current of about 30mA flows through
the semiconductor laser.
7) Pay attention to release the heat.
Example of pulse output current control circuit
Connection example of pin protection circuit
V
IN
V
SS
V
SS
V
IP
V
SS
V
SS
V
SS
V
Ib1
(0 to 5V)
V
DD
V
DD
+5V
OUT
LASER DIODE
OUTSIDE GN8061
INSIDE GN8061
from CONTROL
CIRCUIT
V
DD
V
Ib2
(–5 to 0V)
–5.0V
100 to 200W
3k to 5kW
200 to 2k
50
5.0V
GN8061
GND
V
Ib1
V
Ib2
OUT
V
SS
V
IN
V
DD
V
IP
MA3068(V
Z
=6.8V,Cd=85pF,R
Z
=6
)
GN8061
GND
V
Ib1
I
B
V
EE
=–5 to 0V
I COLLECTOR
V
Ib2
OUT
V
SS
V
IN
V
DD
V
IP
5
0.22
m
F
–
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