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參數(shù)資料
| 型號： | GMR C6 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Giant Magneto Resistive Position Sensor(磁場傳感器) |
| 中文描述： | 巨磁電阻位置傳感器（磁場傳感器） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | GMR C6 |
GMR C6
Data Sheet
3
2000-07-01
Application Hints
The application mode of the GMR position sensor is preferably as a bridge or halfbridge
circuit. This circuit compensates for the
T
C
of the resistance value
R
0
. To compensate
for the
T
C
of the GMR effect
R
/
R
0
, if there is the necessity, is left to the application circuit
and can be done for example with a NIC circuit. When operated over a complete 360
°
turn, two total signals of
>
20 mV/V are achieved at 25
°
C with two halfbridges. In the
case of linear position sensing, the electrical circuit remains unchanged, also providing
two phaseshifted signals (i.e.sine and cosine).
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Supply voltage
Thermal conductivity
Magnetic field
1)
Symbol
T
A
T
stg
V
1
G
thC
A
H
rot
Value
– 40 … + 150
– 50 … + 150
7
> 4
< 15
Unit
°
C
°
C
V
mW/K
kA/m
1)
larger fields may reduce the magnetoresistive effect irreversibly
Characteristics
(
T
A
= 25
°
C)
Parameter
Nominal supply voltage
Basic resistance
Magnetoresistive effect
H
rot
= 5 ... 15 kA/m
Output signal halfbridge
Offset voltage per halfbridge
Symbol
V
1N
R
0
R
/
R
0
Value
5
> 700
> 4
Unit
V
%
@
V
1N
= 5 V
V
OUT
> 100
< 8
mV
mV
@
V
1N
= 5 V
|
V
0
|
Temperature coefficient of
basic resistance
Temperature coefficient of
magnetoresistance
Temperature coefficient of
magnetoresistive effect
TC
R0
+ 0.09 … + 0.12
%/K
TC
R
– 0.12 … – 0.09
%/K
TC
R/R0
– 0.27 … – 0.23
%/K
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