參數(shù)資料
型號(hào): GMR B6
廠商: INFINEON TECHNOLOGIES AG
英文描述: Giant Magneto Resistive Position Sensor(磁場(chǎng)傳感器)
中文描述: 巨磁電阻位置傳感器(磁場(chǎng)傳感器)
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 40K
代理商: GMR B6
GMR B6
Data Sheet
3
2000-07-01
Application Hints
The application mode of the GMR position sensor is preferably as a bridge or halfbridge
circuit. In every case this type of circuit compensates for the
T
C
of the resistance value
R
0
. To compensate for the
T
C
of the GMR effect
R
/
R
0
, if there is the necessity, is left to
the application circuit and can be done for example with a NIC circuit. When operated
over a complete 360
°
turn, a total signal of
20 mV/V is achieved at 25
°
C with a
halfbridge. The output signal is doubled to of
40 mV/V when a fullbridge circuit is used.
In the case of linear position sensing, the electrical circuit remains unchanged.
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Supply voltage
Thermal conductivity
Magnetic field
1)
Symbol
T
A
T
stg
V
1
G
thC
A
H
rot
Value
– 40 … + 150
– 50 … + 150
7
> 4
< 15
Unit
°
C
°
C
V
mW/K
kA/m
1)
larger fields may reduce the magnetoresistive effect irreversibly
Characteristics (
T
A
= 25
°
C)
Parameter
Nominal supply voltage
Basic resistance
Magnetoresistive effect
H
rot
= 5 ... 15 kA/m
Output signal fullbridge
Offset voltage
Temperature coefficient of
basic resistance
Temperature coefficient of
magnetoresistance
Temperature coefficient of
magnetoresistive effect
Symbol
V
1N
R
0
R
/
R
0
Value
5
> 700
> 4
Unit
V
%
@
V
1N
= 5 V
V
OUT
@
V
1N
= 5 V |
V
0
|
> 200
< 8
+ 0.09 … + 0.12
mV
mV
%/K
TC
R0
TC
R
– 0.12 … – 0.09
%/K
TC
R/R0
– 0.27 … – 0.23
%/K
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