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參數(shù)資料
| 型號(hào)： | GMBTA64 |
| 廠商： | GTM CORPORATION |
| 英文描述： | PNP SILICON TRANSISTOR |
| 中文描述： | 進(jìn)步黨硅晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 230K |
| 代理商： | GMBTA64 |
1/2
G
G M
M B
B T
TA
A6644
P
P N
N P
P S
S II LL II C
C O
O N
N T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.
Features
&High D.C. Current Gain
&For Complementary with NPN Type GMBTA14
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0 C
10 C
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-30
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-10
V
Collector Current
IC
-500
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-30
-
V
IC=-100uA , IE=0
BVCES
-30
-
V
IC=-100uA, IB=0
BVEBO
-10
-
V
IE=-10uA, IC=0
ICBO
-
-100
nA
VCB=-30V, IE=0
IEBO
-
-100
nA
VCE=-10V
VCE(sat)
-
-1.5
V
IC=-100mA, IB=-0.1mA
VBE(on)
-
-2
V
VCE=-5V, IC=-100mA
HFE1
10K
-
VCE=-5V, IC=-10mA
HFE2
20K
VCE=-5V, IC=-100mA
fT
125
-
MHz
VCE=-5V, IC=-100mA, f=100MHz
*Pulse Test :Pulse width 380us,Duty Cycly 2%
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