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參數(shù)資料
| 型號(hào)： | GM72V66841ELT-7 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 INCH, TSOP2-54 |
| 文件頁(yè)數(shù)： | 24/57頁(yè) |
| 文件大小： | 592K |
| 代理商： | GM72V66841ELT-7 |
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LG Semicon
GM72V66841CT/CLT
CLK
DQ(output)
in
in
Command
l
BSW
= 0
cycle
Burst Length = full page
Burst stop command at burst write:
The burst
stop command (BST command) is used to stop
data input during a full-page burst write. No data
is written in the same cycle as the BST
command, and in subsequent cycles.
In addition, the BST command is only valid
during full-page burst mode, and is invalid with
burst lengths of 1, 2, 4, and 8. And an interval of
t
RWL
is required between the last data-in and the
next Precharge command.
BST
PRE/PALL
t
RWL
23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GM72V66841ELT-75 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-7 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-7K | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM7630 | FIXED MULTI - OUTPUT REGULATOR |
| GM7630SIP10T | FIXED MULTI - OUTPUT REGULATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GM72V66841ELT-75 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-7J | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-7K | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
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