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參數(shù)資料
| 型號： | GM71S16400C(CL) |
| 英文描述： | 4Mx4|5V|4K|5/6/7|FP/EDO DRAM - 16M |
| 中文描述： | 4Mx4 | 5V的| 4K的| 5/6/7 |計(jì)劃生育/ EDO公司的DRAM - 1,600 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 113K |
| 代理商： | GM71S16400C(CL) |
GM71CS16160CL
GM71C16160C
Rev 0.1 / Apr01
C C
= 5V +/-10%, V ss
A
= 0 ~ 70C)
Symbol
Parameter
Note
V
OH
V
O L
Output Level
Output "H " Level V oltage (I
O U T
=
-5mA
)
Unit
V
V
M ax
V
C C
0.4
M in
2.4
0
Output Level
Output "L" Level V oltage (I
O U T
=
4.
2mA )
I
C C 1
I
C C 2
mA
Standby Current (TTL)
Power Supply Standby Current
(R A S, U C A S, L C A S = V
IH
,
D
OU T
=
H igh-Z )
2
-
I
C C 3
RA S Only Refresh Current
A verage Power Supply Current
RA S Only Refresh Mode
(t
R C
=
t
R C
min)
I
C C 4
I
C C 5
mA
Standby Current (CMOS)
Power Supply Standby Current
(R A S, U C A S or L C A S >= V
C C
- 0.2V , D
OU T
= H igh-Z)
1
-
I
C C 6
CA S-before-RA S Refresh Current
(t
R C
=
t
R C
min)
150
-
I
L (I)
uA
10
-10
I
L (O)
uA
10
-10
Input Leakage Current
A ny Input (0V
<=
V
IN
<=
6V )
Output Leakage Current
(D
OU T
is Disabled, 0V
<=
V
O U T
<=
6V )
Fast Page Mode Current
Fast Page Mode
(
PC
= t
PC
min)
mA
110
50ns
ns
70
100
90
1, 2
-
2
mA
-
110
50ns
ns
70
100
90
-
115
50ns
ns
70
105
95
mA
110
50ns
ns
70
-
-
90
I
C C 8
(Standby with CBR Refresh)
(
=31.3us
,
<=
0.3
O U T
=
500
-
uA
I
C C 9
uA
(RA S, U C A S or L C A S<=0.2V
O U T
=
300
-
Note: 1. I
C C
depends on output load condition when the device is selected.
(max) is specified at the output open condition.
2. A ddress can be changed once or less while RA S = V
IL
3. A ddress can be changed once or less while LCA S and UCA S = V
IH
.
5. L-version.
Operating Current
(RA S, UC A S or L C A S C ycling
:
t
R C
=
t
R C
min)
mA
-
1
U
C A S, L C A S = V
D
O U T
5
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|---|---|
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