參數(shù)資料
型號(hào): GLT5640AL16
廠商: Electronic Theatre Controls, Inc.
英文描述: 4M X 16 CMOS Synchronous Dynamic RAM
中文描述: 4米× 16個(gè)CMOS同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 17/72頁(yè)
文件大?。?/td> 2315K
代理商: GLT5640AL16
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 17 -
5.1 Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0, binary)
(decimal)
Sequential Addressing Sequence
(decimal)
Interleave Addressing Sequence
0
1
0, 1
1, 0
0, 1
1, 0
(Burst of Four)
Starting Address
(column address A1 - A0, binary)
00
01
10
11
Sequential Addressing Sequence
(decimal)
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
Interleave Addressing Sequence
(decimal)
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
(Burst of Eight)
Starting Address
(column address A2 - A0, binary)
(decimal)
000
001
010
011
100
101
110
111
Full page burst is an extension of the above tables of sequential addressing, with the length being 256 for 4Mx16.
Sequential Addressing Sequence
(decimal)
Interleave Addressing Sequence
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7, 0
2, 3, 4, 5, 6, 7, 0, 1
3, 4, 5, 6, 7, 0, 1 ,2
4, 5, 6, 7, 0, 1, 2, 3
5, 6 ,7, 0, 1, 2, 3, 4
6, 7 ,0 ,1 ,2 ,3 ,4 ,5
7, 0, 1, 2, 3, 4, 5, 6
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GLT5640AL16-10TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM
GLT5640AL16-5.5TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM
GLT5640AL16-6TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM
GLT5640AL16-7TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM
GLT5640AL16-8TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM