參數(shù)資料
型號： GLT4160L04-50J3
廠商： Electronic Theatre Controls, Inc.
英文描述： 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
中文描述： 4米× 4 CMOS動態(tài)RAM的擴展數(shù)據(jù)輸出
文件頁數(shù)： 5/22頁
文件大?。?/td> 588K
代理商： GLT4160L04-50J3
G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 5 -
DC and Operating Characteristics (1-2)
T
A
= 0
°
C to 70
°
C, -20
°
C to 85
°
C V
CC
=3.3V
±
0.3V, V
SS
=0V, unless otherwise specified.
Sym.
Parameter
Test Conditions
Access
Time
Min.
Typ
Max.
Unit Notes
I
LI
Input Leakage Current
(any input pin)
0V
≤
V
IN
≤
V
CC
+0.3V
(All other pins not under
test=0V)
0V
≤
V
out
≤
V
CC
Output is disabled (Hiz)
t
RC
= t
RC
(min.)
-5
+5
μ
A
I
LO
Output Leakage Current
(for High-Z State)
Operating Current,
Random READ/WRITE
-5
+5
μ
A
I
CC1
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 70ns
130
120
80
70
mA
1,2
I
CC2
Standby Current (TTL)
RAS
,
CAS
at V
IH
other inputs
≥
V
SS
1
mA
I
CC3
Refresh Current,
RAS
-Only
RAS
cycling,
CAS
at V
IH
t
RC
= t
RC
(min.)
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 70ns
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 70ns
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
t
RAC
= 70ns
130
120
80
70
130
120
80
70
130
120
80
70
mA
2
I
CC4
Operating Current,
EDO Page Mode
RAS
at V
IL
,
CAS
address
cycling:t
PC
=t
PC
(min.)
mA
1,2
I
CC5
Refresh Current,
CAS
Before
RAS
RAS
,
CAS
address cycling:
t
RC
=t
RC
(min.)
mA
1
I
CC6
Standby Current, (CMOS)
RAS
≥
V
CC
-0.2V,
CAS
≥
V
CC
-0.2V,
All other inputs V
SS
300
μ
A
1,5
I
CC7
Self refresh Current
RAS
=
CAS
=0.2V,
WE = OE = A
0
~A
10
=V
CC
-0.2V or
0.2V
DQ
~DQ
3
=V
CC
-0.2V,0.2V or
Open
300
μ
A
V
IL
V
IH
V
OL
V
OH
Notes:
1. I
CC
is dependent on output loading when the device output is selected. Specified I
(max.) is measured with the output open.
2. I
CC
is dependent upon the number of address transitions specified ICC(max.) is measured with a maximum of one transition per address cycle
in random Read/Write and EDO Fast Page Mode.
3. Specified V
IL
(min.) is steady state operation. During transitions V
IL
(min.) may undershoot to –1V for a period not to exceed 15ns. All AC
parameters are measured with V
IL
(min.)
≥
V
SS
and V
IH
(max.)
≤
V
CC
.
4. Specified V
IH
(max.) is steady state operation . During transitions V
IH
(max.) may overshoot to V
CC
+1V for a period not to exceed 15ns. All AC
parameters are measured with V
IL
(min.)
≥
V
SS
and VIH(max.)
≤
V
CC
.
5. S-Version.
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
-0.3
2.0
+0.8
V
CC
+0.3
0.4
V
V
V
V
3
4
I
OL
= 2mA
I
OH
= -2mA
2.4
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