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| 型號(hào)： | GLT41316-35TQ |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 64K的× 16的CMOS動(dòng)態(tài)RAM的快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 5/22頁(yè) |
| 文件大?。?/td> | 1497K |
| 代理商： | GLT41316-35TQ |
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G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 5 -
DC and Operating Characteristics (1-2)
T
A
= 0
°
C to 70
°
C, V
CC
=5V
±
10%, V
SS
=0V, unless otherwise specified.
Sym.
Parameter
Test Conditions
Access
Time
Min.
Typ
Max.
Unit Notes
I
LI
Input Leakage Current
(any input pin)
0V
≤
V
IN
≤
5.5V
(All other pins not under
test=0V)
0V
≤
V
out
≤
5.5V
Output is disabled (Hiz)
-10
+10
μ
A
I
LO
Output Leakage Current
(for High-Z State)
Operating Current,
Random READ/WRITE
-10
+10
μ
A
I
CC1
t
RC
= t
RC
(min.)
t
RAC
= 30ns
t
RAC
= 35ns
t
RAC
= 40ns
t
RAC
= 45ns
180
170
160
150
mA
1,2
I
CC2
Standby Current,(TTL)
RAS
,
CAS
at V
IH
other inputs
≥
V
SS
4
mA
I
CC3
Refresh Current,
RAS-Only
RAS
cycling,
CAS
at
V
IH
t
RC
= t
RC
(min.)
t
RAC
= 30ns
t
RAC
= 35ns
t
RAC
= 40ns
t
RAC
= 45ns
t
RAC
= 30ns
t
RAC
= 35ns
t
RAC
= 40ns
t
RAC
= 45ns
t
RAC
= 30ns
t
RAC
= 35ns
t
RAC
= 40ns
t
RAC
= 45ns
180
170
160
150
180
170
160
150
180
170
160
150
mA
2
I
CC4
Operating Current,
EDO Page Mode
RAS
at V
IL
,
CAS
,
address cycling: t
PC
=
t
PC
(min.)
mA
1,2
I
CC5
Refresh Current,
CAS Before RAS
RAS
,
CAS
,
address cycling:
t
RC
= t
RC
(min.)
mA
1
I
CC6
Standby Current, (CMOS)
RAS
≥
V
CC
-0.2V,
CAS
≥
V
CC
-0.2V,
All other inputs
≥
V
SS
2
mA
V
IL
V
IH
V
OL
V
OH
Notes:
1.
I
CC
is dependent on output loading when the device output is selected. Specified I
CC(max.)
is measured with the
output open.
2. I
CC
is dependent upon the number of address transitions specified I
CC(max.)
is measured with a maximum of
one transition per address cycle in random Read/Write and Fast Page Mode.
3. Specified V
IL(min.)
is steady state operation. During transitions V
IL(min.)
may undershoot to -1.0V for a period not
to exceed 20ns. All AC parameters are measured with V
IL(min.)
≥
V
SS
and V
IH(max.)
≤
V
CC
.
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
-1
2.4
+0.8
V
CC
+1
0.4
V
V
V
V
3
3
I
OL
= 4.2mA
I
OH
= -5mA
2.4
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|---|---|
| GLT41316-35TS | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-40FA | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-40FB | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-40FC | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GLT41316-35TS | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-40FA | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-40FB | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-40FC | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-40J3 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
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