參數(shù)資料
型號: GLT41316-30P
廠商: Electronic Theatre Controls, Inc.
英文描述: 3.3V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
中文描述: 64K的× 16的CMOS動態(tài)RAM的快速頁面模式
文件頁數(shù): 3/22頁
文件大?。?/td> 1497K
代理商: GLT41316-30P
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 3 -
Absolute Maximum Ratings*
Capacitance*
T
A
=25
°
C, V
CC
=5V
±
10%, V
SS
=0V
Operating Temperature, T
A
(ambient)
.......................................-0
°
C to +70
°
C
Storage Temperature(plastic)....-55
°
C to +150
°
C
Voltage Relative to V
SS
...............-1.0V to + 7.0V
Short Circuit Output Current......................50mA
Power Dissipation......................................1.0W
*Note: Operation above Absolute Maximum Ratings
can adversely affect device reliability.
Symbol
C
IN1
C
IN2
C
OUT
Parameter
Address Input
RAS
,
CAS
,
UW
,
LW
,
OE
Data Input/Output
Max.
5
7
7
Unit
pF
pF
pF
*Note: Capacitance is sampled and not 100% tested
Electrical Specifications
l
WEmeans UWand LW.
l
All voltages are referenced to GND.
l
After power up, wait more than 100
μ
s and then, execute eight CAS-before-RAS or RAS-only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
相關PDF資料
PDF描述
GLT41316-30PL 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
GLT41316-30Q 4.096V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
GLT41316-45FC 1.25V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
GLT41316-45P 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
GLT41316-45PL 1.25V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
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