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G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 6 -
AC Characteristics (0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
Test condition:V
CC
=5.0V
±
10%, V
IH
/V
IL
=2.4V/0.8V,V
OH
/V
OL
=2.4V/0.4V
Parameter
t
RAC
= 30 ns t
RAC
= 35 ns t
RAC
= 40 ns t
RAC
= 45 ns
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes
Symbo
l
t
RC
t
RWC
t
RAC
Read/Write Cycle Time
Read Midify Write Cycle Time
65
80
-
-
-
70
99
-
-
-
75
105
-
-
-
80
110
-
-
-
ns
ns
ns
Access Time from RAS
30
35
40
45
3,4
Access Time from CAS
Access Time from Column Address
t
CAC
-
10
-
11
-
12
-
12
ns
3,4
t
AA
t
CLZ
-
0
15
-
0
18
-
-
0
20
-
-
0
22
-
ns
ns
3,4
3
CAS to Output in Low-Z
Output Buffer Turn-off Delay from CAS
Transition Time(Rise and Fall)
t
OFF
3
8
3
8
3
8
3
8
ns
7
t
T
t
RP
3
50
-
3
50
-
3
50
-
3
25
50
-
ns
ns
2
RAS Precharge Time
25
25
25
RAS Pulse Width
t
RAS
30
100k
35
100k
40
100K
45
100K
ns
RAS Hold Time
t
RSH
10
-
12
-
12
-
13
-
ns
CAS Hold Time
t
CSH
30
-
36
-
40
-
46
-
ns
CAS Pulse Width
t
CAS
10
10000
12
10000
12
10000
13
10000 ns
RAS to CAS Delay Time
t
RCD
13
20
17
24
18
28
18
33
ns
4
RAS to Column Address Delay Time
t
RAD
10
15
12
17
13
20
13
23
ns
4
CAS to RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time Referenced
t
CRP
5
-
5
-
5
-
5
-
ns
8
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
0
7
0
6
-
-
-
-
-
0
7
0
6
-
-
-
-
-
0
8
0
6
-
-
-
-
-
0
8
0
6
39
-
-
-
-
-
ns
ns
ns
ns
ns
to RAS
Column Address Lead Time Referenced
26
30
34
to RAS
Read Command Setup Time
Read Command Hold Time Referenced
t
RAL
15
-
18
-
20
-
23
-
ns
t
RCS
t
RRH
0
0
-
-
0
0
-
-
0
0
-
-
0
0
-
-
ns
ns
to RAS
Read Command Hold Time Referenced
9
to CAS
t
RCH
0
-
0
-
0
-
0
-
ns
9
WE Hold Time Referenced to CAS
Write Command Hold Time Referenced
t
WCH
6
-
6
-
6
-
6
-
ns
10
to RAS
t
WCR
26
-
30
-
34
-
39
-
ns
5
WE Pulse Width
t
WP
6
-
6
-
6
-
6
-
ns
10
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| GLT41316-20FB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
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| GLT41316-20J4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-20P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
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