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參數(shù)資料
| 型號： | GLT41316-15TC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4.096V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125 |
| 中文描述： | 64K的× 16的CMOS動態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大小： | 1497K |
| 代理商： | GLT41316-15TC |
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 7 -
Parameter
t
RAC
= 30 ns t
RAC
= 35 ns t
RAC
= 40 ns t
RAC
= 45 ns
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes
Symbo
l
t
RWL
WE Lead Time Referenced to RAS
10
-
11
-
12
-
12
-
ns
WE Lead Time Referenced to CAS
Data-In Setup Time
Data-In Hold Time
t
CWL
10
-
11
-
12
-
12
-
ns
t
DS
t
DH
t
DHR
0
7
-
-
-
0
7
-
-
-
0
8
-
-
-
0
8
41
-
-
-
ns
ns
ns
11
11
6
Data Hold Time Referenced to RAS
27
31
36
WE Setup Time
t
WCS
0
-
0
-
0
-
0
-
ns
5
RAS to WE Delay Time
t
RWD
47
-
58
-
63
-
68
-
ns
5
CAS to WE Delay Time
t
CWD
24
-
29
-
30
-
30
-
ns
5
Column Address to WE Delay Time
t
AWD
29
-
36
-
38
-
40
-
ns
5
CAS Setup Time(CAS before RAS
Refresh)
t
CSR
5
-
5
-
5
-
5
-
ns
CAS Hold Time(CAS before RAS
Refresh)
t
CHR
10
-
10
-
10
-
10
-
ns
RAS to CAS Precharge Time
t
RPC
5
-
5
-
5
-
5
-
ns
CAS Precharge Time(CBR Counter Test
Cycle)
t
CPT
20
-
20
-
20
-
20
-
ns
Access Time from CAS Precharge
Fast Page mode Read/Write Cycle Time t
PC
Fast Page mode Read Modify Write
Cycle Time
t
CPA
-
18
-
21
-
23
-
25
ns
3
18
48
-
-
21
60
-
-
23
63
-
-
25
65
-
-
ns
ns
t
PRWC
CAS Precharge Time(Fast Page mode)
t
CP
5.5
-
6
-
7
-
7
-
ns
RAS Pulse Width(Fast Page mode)
t
RASP
30
100k
35
100k
40
100K
45
100K
ns
RAS Hold Time from CAS Precharge
t
RHCP
25
-
25
-
25
-
30
-
ns
Access Time from OE
t
OEA
-
10
-
11
-
12
-
12
ns
OE to Delay Time
Output Buffer Turn-off Delay Time from
t
OED
8
-
8
-
8
-
8
-
ns
OE
t
OEZ
3
8
3
8
3
8
3
8
ns
7
OE Hold Time
t
OEH
6
-
6
-
7
-
7
-
ns
WE Hold Time(Hidden Refresh Cycle)
Refresh Time(256cycles)
t
WHR
15
-
15
-
15
-
15
-
ns
t
REF
-
4
-
4
-
4
-
4
ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GLT41316-15TQ | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-15TS | 1.25V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125 |
| GLT41316-20FA | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-20FB | 1.25V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125 |
| GLT41316-20FC | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GLT41316-15TQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-15TS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-20FA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-20FB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT41316-20FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
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