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參數(shù)資料
| 型號： | GL496 |
| 廠商： | Sharp Corporation |
| 英文描述： | High Speed Infrared Emitting Diode |
| 中文描述： | 高速紅外線發(fā)光二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | GL496 |
V
F
V
FM
I
F
= 50mA
I
FM
= 0.5A
I
R
I
E
V
R
= 3V
I
F
= 50mA
λ
p
λ
Φ
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 0V,f =1MHz
= 50mA +10mAp-p
I
F
= 50mA
-
-
V
V
-
-
10
-
-
900
μ
A
mW
nm
nm
pF
MHz
880
50
60
40
±22
-
-
-
-
-
-
-
-
- 40
- 20
0
20
40
60
80
100
0
25
85
10
50
100
500
(Ta=25 C)
5000
1000
1
10
- 4
10
- 3
10
- 2
10
- 1
T
a
= 25C
Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
1.55
2.6
MAX.
1.75
3.6
Unit
Forward voltage
Peak forward voltage
Radiant flux
Peak emission wavelength
Half intensity wavelength
Terminal capacitance
Response frequency
Half intensity angle
Fig. 1 Forward Current vs. Ambient
Temperature
60
Fig. 2 Peak Forward Current vs. Duty Ratio
F
F
Ambient temperature T
a
(C)
P
Pulse width<=100
μ
s
GL496
Radiant intensity
*3
*4
C t
fc
θ
I
F
3.0
-
850
12
mW/sr
10.0
*4 Frequency to bring about -3dB reduction of modulated radiant intensity from 100kHz
Reverse current
E
50
40
30
20
10
*3 Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr (steradian) in the direction of mechanical axis of the lens portion
into 1 sr or all those emitted from the light emitting diode.
I
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