
I
F
I
FM
V
R
T
opr
T
stg
T
sol
60
0.5
4
mA
A
V
C
C
C
260
(Ta=25C)
(Ta=25 C)
(2.54)
0
1
2
V
F
V
FM
I
R
I
E
λ
P
I
F
= 50mA
I
FM
= 0.5A
V
R
= 3V
I
F
= 50mA
I
F
I
F
= 50mA
I
F
=50mA+10mA
p-p
-
-
-
V
V
μ
A
mW/sr
nm
nm
MHz
2.2
-
18
880
40
10
-
-
-
-
-
-
-
-
-
λ
f
C
θ
I
F
= 20mA
φ
3.8
φ
3.0
±
0.15
0
M
5
±
2
-
0.5
+
-
0.15
2
+
-
Features
1. Compact 3
φ
resin mold package
2.
Peak emitting wavelength conforming to SIR system based on IrDA
(
λ
p=880 nm [I
F
=50mA])
3. Narrow beam angle
(Half intensity angle : TYP. ± 17 )
4. High speed response
(Cut-off frequency fc : TYP.12MHz)
Applications
Absolute Maximum Ratings
Outline Dimensions
(Unit : mm)
0
M
1
±
Parameter
Symbol
Rating
Unit
Forward current
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
Soldering temperature
*3
I
E
: Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr (steradian) in the direction of mechanical axis of
the lens portion into 1 sr or all those emitted from the light emitting diode.
Parameter
Peak forward voltage
Reverse voltage
*3
Radiant intensity
Forward voltage
Peak emission wavelength
Half intensity wavelength
Response frequency
Half intensity angle
Symbol
Conditions
MIN.
TYP.
1.5
MAX.
1.7
3.8
Unit
- 25 to + 85
- 40 to + 85
GL382
GL382
IrDA-Based SIR System-Conforming
Infrared Emitting Diode
*2 For 3 seconds at the position of 2.6 mm from the resin edge
*1 Pulse width <= 100
μ
s, Duty ratio=0.01
= 50mA
6
12
± 17
*2
*1
1. Portable information terminal equipment
2. Personal computers
3. Printers
Electro-optical Characteristics
2
2 Cathode
1
1 Anode
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
”
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
I
I
I
I
I
*
Tolerance
: ±
0.2mm
3