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參數(shù)資料
| 型號： | GL12T |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 靜電保護(hù)器 |
| 英文描述： | Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces |
| 中文描述： | 低電容ESD保護(hù)二極管的高高速數(shù)據(jù)接口 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 76K |
| 代理商： | GL12T |
VISHAY
GL05T to GL24T
Vishay Semiconductors
Document Number 85809
Rev. 2, 03-Jun-03
www.vishay.com
1
1
2
3
17416
Low Capacitance ESD Protection Diodes for High-Speed Data
Interfaces
Features
Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-5 (Lightning) see I
PPM
below
Small package for use in portable electronics
High temperature soldering guaranteed:
260 °C/ 10 sec. at terminals
Low capacitance for high speed data lines,
cellular handsets, USB port protection,
LAN equipment, peripherals
Mechanical Data
Case:
SOT-23 Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight:
8 mg
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak pulse power
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Electrical Characteristics
Test condition
Symbol
P
PK
V
ESD
Value
300
Unit
W
8/20
μ
s waveform
ESD per IEC 61000-4-2
ESD voltage
>25
kV
Parameter
Test condition
Symbol
T
J
T
stg
, T
STG
Value
Unit
°C
Operation temperature
- 55 to + 125
Storage temperature
- 55 to + 150
°C
Part
Number
Marking
Code
V
RWM
V
BR(min)
I
R(max)
V
C(max)1)
I
PPM
C
j
Pin1 to Pin2
Pin3 NC
V
R
= 0 V
f = 1 MHz
pF
5
5
5
5
@ It = 1.0 mA
@ V
RWM
I
PP
= 1.0 A
I
PP
= 5.0 A
t
p
= 8/20
μ
s
V
5
12
15
24
V
6
μ
A
20
1
1
1
V
A
17
12
10
5
GL05T
GL12T
GL15T
GL24T
L05
L12
L15
L24
9.8
19
24
43
11
24
33
55
13.3
16.7
26.7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GL15T | Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces |
| GL05T | Low-capacitance ESD protection; data line protection; |
| GL24T | Low-capacitance ESD protection; data line protection; |
| GL1A | Standard silicon rectifier diodes |
| GL1B | Standard silicon rectifier diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GL12T-E3-08 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Semiconductors 功能描述:DIODE ESD LOW CAP 12V SOT23 制造商:Vishay Semiconductors 功能描述:TVS DIODE 12VWM 24VC SOT23 |
| GL12T-G3-18 | 制造商:Vishay Intertechnologies 功能描述:ESD PROTECTION DIODE SOT23 |
| GL12TGS08 | 制造商:Vishay Angstrohm 功能描述:ESD Suppressor TVS 制造商:Vishay 功能描述:ESD Suppressor TVS |
| GL12T-GS08 | 功能描述:ESD 抑制器 Dual Diode 12Vrwm RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| GL12T-GS18 | 功能描述:ESD 抑制器 Dual Diode 12Vrwm RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
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