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參數(shù)資料
| 型號： | GI01N60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強型功率MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 300K |
| 代理商： | GI01N60 |
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
G
I
01N60 Page: 2/5
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BV
DSS
600
-
-
V
V
GS
=0, I
D
=250uA
Breakdown Voltage Temperature Coefficient
BV
DSS
/
Tj
-
0.6
-
V/
к
Reference to 25
к
, I
D
=1mA
Gate Threshold Voltage
V
GS(th)
2.0
-
4.0
V
V
DS
=V
GS
, I
D
=250uA
Forward Transconductance
g
fs
-
0.8
-
S
V
DS
=50V, I
D
=0.8A
Gate-Source Leakage Current
I
GSS
-
-
100
nA
V
GS
=
20V
Drain-Source Leakage Current(Tj=25
к
)
-
-
100
uA
V
DS
=600V, V
GS
=0
Drain-Source Leakage Current(Tj=
150
к
)
I
DSS
-
-
500
uA
V
DS
=480V, V
GS
=0
Static Drain-Source On-Resistance
R
DS(ON)
-
7.2
8.0
V
GS
=10V, I
D
=0.8A
Total Gate Charge
3
Q
g
-
7.7
-
Gate-Source Charge
Q
gs
-
1.5
-
Gate-Drain (“Miller”) Change
Q
gd
-
2.6
-
nC
I
D
=1.6A
V
DS
=480V
V
GS
=10V
Turn-on Delay Time
3
T
d(on)
-
8
-
Rise Time
T
r
-
5
-
Turn-off Delay Time
T
d(off)
-
14
-
Fall Time
T
f
-
7
-
ns
V
DD
=300V
I
D
=1.6A
V
GS
=10V
R
G
=10
R
D
=187.5
Input Capacitance
C
iss
-
286
-
Output Capacitance
C
oss
-
25
-
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
C
rss
-
5
-
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage
3
V
SD
-
-
1.5
V
I
S
=1.6A, V
GS
=0V, Tj=25
к
Continuous Source Current (
Body Diode
)
I
S
-
-
1.6
A
V
D
= V
G
=0V, V
S
=1.5V
Pulsed Source Current (
Body Diode
)
1
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25
к
, V
DD
=50V, L=10mH, R
G
=25
, I
AS
=1.6A.
3. Pulse width
300us, duty cycle
I
SM
-
-
6
A
2%.
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