參數(shù)資料
型號(hào): GH30707A2A
英文描述: LASER DIODE
中文描述: 激光二極管
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 62K
代理商: GH30707A2A
56
Laser Diodes
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet address for Electronic Components Group http://sharp-world.com/ecg/
Internet
GH30707A2A
I
Electro-optical Characteristics
1
(T
C
=25C)
Parameter
Symbol
Unit
Threshold current
Operating current
Operating voltage
Wavelength
I
th
I
op
V
op
λ
p
55
70
2.3
793
mA
mA
V
nm
Half intensity
angle
Misalignment
angle
2
3
Parallel
2
3
Perpendicular
3
Parallel
3
Perpendicular
θ//
θ⊥
θ//
14
42
+
2
θ⊥
+
3
1
Initial value, CW (Continuous Wave) drive
2
Angle at 50% peak intensity (full-width at half-
maximum)
3
Parallel to the junction plane (X-Z plane), Perpendicular to the junction plane (Y-Z plane)
Red laser
MIN.
-
-
-
36
46
2.2
654
7
8.5
29
0
25
-2
-2
0
Po=5mW
640
Differential efficiency
η
d
3mW
I(5mW)-I(2mW)
Po=5mW
0.3
0.55
0.57
mW/mA
Interference pattern intensity
α
-
-
1
-
Infrared laser
MIN.
-
-
-
783
8
28
-2
-3
55
65
2.7
660
10
35
+
2
+
2
-
32
42
1.9
788
11
32
0
0
Po=5mW
0.8
5mW
I(5mW)-I(2mW)
Po=5mW
0.45
1
-
Conditions
TYP.
MAX.
Conditions
TYP.
MAX.
0.14
-
Parameter
Symbol
Unit
Output current
I
m
0.4
mA
Red laser
MIN.
Po=5mW
V
rd
=5V
V
rd
=5V
0.04
0.18
Dark current
I
D
-
-
150
nA
Infrared laser
MIN.
0.4
Po=5mW
V
rd
=5V
V
rd
=5V
0.13
150
-
Conditions
TYP.
MAX.
Conditions
TYP.
MAX.
0.04
-
I
Electrical Characteristics of Photodiode
(T
C
=25C)
Distance between laser emission points
Unit :
μ
m
MAX.
113
I
Distance between Laser Emission Points and Emission Point Accuracy
X
1
Y
2
Z
3
0
±
80
1.18 ±80
0
±
80
Emission point of red laser
Emission point of
infrared laser(Center of the stem)
L : Distance on a plane
L
X
Reference plane
C
L
Z
Emission point of
infrared laser
Emission point of
infrared laser
Emission point of laser diode
Z=1.18
±
0.08mm
MIN.
107
L
TYP.
110
Please refer to the chapter "Handling Precautions"
Emission point accuracy
Unit :
μ
m
1
Emission point position of infrared laser to the stem center(X direction)
Emission point position of infrared laser to the stem center(Y direction)
Emission point position of laser to the reference plane (Z)
2
3
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