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參數(shù)資料
| 型號(hào)： | GF9926D |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | CHIP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 6A條（丁）|芯片 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | GF9926D |
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Fast Switching
Logic Level
Ideal for Li ion battery pack applications
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
±
10
V
Gate-Source Voltage
V
GS
Continuous Drain Current
T
J
= 150°C
(1)
T
A
= 25°C
T
A
= 70°C
I
D
6.0
4.8
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
(1)
I
DM
20
I
S
1.7
Maximum Power Dissipation
(1)
T
A
= 25°C
T
A
= 70°C
P
D
2.0
1.3
W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
(1)
Thermal Resistance
T
J
, T
stg
–55 to 150
°C
R
θ
JA
62.5
°C/W
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.5g
GF9926
Dual N-Channel Enhancement-Mode MOSFET
Low V
GS(th)
V
DS
20V
R
DS(ON)
30
m
I
D
6.0A
T
RENCH
G
EN
F
ET
4/11/01
S1
1
D1
8
D1
7
D2
6
D2
5
G1
2
S2
3
G2
4
Q1
Q2
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
°
0
°
–
8
°
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
SO-8
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