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參數(shù)資料
| 型號： | GF4936 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 30V的五（巴西）直| 5.8AI（四）|蘇 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 98K |
| 代理商： | GF4936 |
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
=
±
20V
30
–
–
V
Gate Threshold Voltage
V
GS(th)
1.0
–
3.0
±
100
V
Gate-Body Leakage
I
GSS
–
–
nA
Zero Gate Voltage Drain Current
On-State Drain Current
(2)
I
DSS
V
DS
= 30V, V
GS
= 0V
–
–
1
μ
A
I
D(on)
V
DS
≥
5V, V
GS
= 10V
20
–
–
A
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 10V, I
D
= 5.8A
–
23.5
37
m
V
GS
= 4.5V, I
D
= 4.7A
–
32.5
55
Forward Transconductance
(2)
g
fs
V
DS
= 15V, I
D
= 5.8A
–
16
–
S
Dynamic
Total Gate Charge
Q
g
–
15
25
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
–
2.1
–
nC
Gate-Drain Charge
Q
gd
I
D
= 5.8A
–
2.8
–
Turn-On Delay Time
t
d(on)
–
7
16
Rise Time
t
r
V
DD
= 15V, R
L
= 15
I
D
≈
1A, V
GEN
= 10V
R
G
= 6
–
6
16
Turn-Off Delay Time
t
d(off)
–
25
40
ns
Fall Time
t
f
–
8
35
Input Capacitance
C
iss
V
GS
= 0V
–
840
–
Output Capacitance
C
oss
V
DS
= 15V
–
150
–
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
–
80
–
Source-Drain Diode
Maximum Diode Forward Current
Diode Forward Voltage
(2)
I
S
–
–
1.7
A
V
SD
I
S
= 1.7A, V
GS
= 0V
–
0.75
1.2
V
Notes:
(1) Surface mounted on FR4 board, t
≤
10 sec.
(2) Pulse test; pulse width
≤
300
μ
s,
duty cycle
≤
2%
GF4936
Dual N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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