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參數(shù)資料
| 型號(hào)： | GF4450 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 7.5AI（四）|蘇 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | GF4450 |
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
=
±
20V
60
–
–
V
Gate Threshold Voltage
V
GS(th)
2.0
–
—
V
Gate-Body Leakage
I
GSS
–
–
±
100
nA
Zero Gate Voltage Drain Current
On-State Drain Current
(2)
I
DSS
V
DS
= 60V, V
GS
= 0V
–
–
1.0
μ
A
I
D(on)
V
DS
≥
5V, V
GS
= 10V
20
–
–
A
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 10V, I
D
= 7.5A
–
12
24
m
V
GS
= 6.0V, I
D
= 6.5A
–
14
30
Forward Transconductance
(2)
g
fs
V
DS
= 15V, I
D
= 7.5A
–
36
–
S
Dynamic
Total Gate Charge
Q
g
–
65
91
Gate-Source Charge
Q
gs
V
DS
= 30V, V
GS
= 10V
–
12
–
nC
Gate-Drain Charge
Q
gd
I
D
= 7.5A
–
14
–
Turn-On Delay Time
t
d(on)
–
17
30
Rise Time
t
r
V
DD
= 30V, R
L
= 30
I
D
≈
1A, V
GEN
= 10V
R
G
= 6
–
13
20
Turn-Off Delay Time
t
d(off)
–
78
117
ns
Fall Time
t
f
–
31
40
Input Capacitance
C
iss
V
GS
= 0V
–
3147
–
Output Capacitance
C
oss
V
DS
= 30V
–
283
–
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
–
140
–
Source-Drain Diode
Diode Forward Voltage
V
SD
I
S
= 2.1A, V
GS
= 0V
–
0.71
1.2
V
Max. Diode Forward Current
I
S
2.1
A
Notes:
(1) Surface Mounted on FR4 Board, t
≤
10s
(2) Pulse test; pulse width
≤
300ms, duty cycle
≤
2%
G
D
S
V
IN
V
DD
V
GS
R
GEN
R
L
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
GF4450
N-Channel Enhancement-Mode MOSFET
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|---|---|
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