參數(shù)資料
型號(hào)： GF4435
英文描述： TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO
中文描述： 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 8A條（丁）|蘇
文件頁數(shù)： 2/5頁
文件大小： 151K
代理商： GF4435
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250
μ
A
V
DS
= 0V, V
GS
=
±
20V
–
1.0
–
–
3.0
±
100
V
Gate-Body Leakage
I
GSS
–
–
nA
Zero Gate Voltage Drain Current
On-State Drain Current
(1)
I
DSS
V
DS
=
–
30V, V
GS
= 0V
–
–
–
1.0
μ
A
I
D(on)
V
DS
≥
–
5V, V
GS
=
–
10V
V
GS
= 0V, I
D
=
–
250
μ
A
–
40
–
–
A
Drain-Source Breakdown Voltage
BV
DSS
–
30
–
–
V
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
=
–
10V, I
D
=
–
8.0A
–
15.3
20
m
V
GS
=
–
4.5V, I
D
=
–
5.0A
–
25.3
35
Forward Transconductance
(1)
g
fs
V
DS
=
–
15V, I
D
=
–
8.0A
–
22
–
S
Dynamic
Total Gate Charge
Q
g
–
54
60
Gate-Source Charge
Q
gs
V
DS
=
–
15V, V
GS
=
–
10V
–
8.5
–
nC
Gate-Drain Charge
Q
gd
I
D
=
–
4.6A
–
10.3
–
Turn-On Delay Time
t
d(on)
–
24
30
Rise Time
t
r
V
DD
=
–
15V, R
L
= 15
I
D
≈
–
1A, V
GEN
=
–
10V
R
G
= 6
–
12
30
Turn-Off Delay Time
t
d(off)
–
78
120
ns
Fall Time
t
f
–
37
80
Input Capacitance
C
iss
V
GS
= 0V
–
2520
–
Output Capacitance
C
oss
V
DS
=
–
15V
–
490
–
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
–
335
–
Source-Drain Diode
Maximum Diode Forward Current
I
S
–
–
–
2.1
A
Diode Forward Voltage
V
SD
I
S
=
–
2.1A, V
GS
= 0V
–
–
0.75
–
1.2
V
Note:
(1) Pulse test; pulse width
≤
300
μ
s,
duty cycle
≤
2%
GF4435
P-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
相關(guān)PDF資料
PDF描述
GF4450 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO
GF4800 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO
GF4810 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO
GF4936 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO
GF4953 TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 4.9A I(D) | SO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GF4435\5B 功能描述:MOSFET P-Channel 30V 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
GF4450 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Enhancement-Mode MOSFET
GF4450\5B 功能描述:MOSFET SO-8 N-CH 60V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
GF467AF 制造商:ELC 功能描述:FUNCTION GENERATOR 3MHZ 制造商:ELC 功能描述:FUNCTION GENERATOR, 3MHZ
GF467F 制造商:ELC 功能描述:FUNCTION GENERATOR 5MHZ+COUNTER
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