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參數(shù)資料
| 型號(hào)： | GDU90-20301 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Gate Drive Unit |
| 中文描述： | 門(mén)驅(qū)動(dòng)裝置 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | GDU90-20301 |
1/4
GDU 90 20301
CONDITIONS - (UNLESS STATED OTHERWISE)
V
1 = +5V
V
2 = +15V
V
3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
Hewlett Packard versatile link HFBR 2524
30mA
DG758BX
500mm CO - AX cable type RC5327230
Hewlett Packard versatile link HFBR 1524
s Used with Gate Turn-Off Thyristors in high current switching
applications
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
I
FGM
40A
I
G(ON)
8A
dI
GQ/dt
40A/
s
APPLICATIONS
KEY PARAMETERS
Units
Max.
Typ.
Min.
Symbol
I
V1
-
4.40
A
I
V2
+15V PSU current
500Hz, 50% duty cycle
500Hz
Parameter
-
0.48
A
V
2(Min)
On-state gate current
dI
FG/dt
dI
GQ/dt
Rate of rise of negative gate current
Rate of rise of positive gate current
-
Measured 10 - 75% I
FGM
I
T = 3000A,
90% I
G(ON) - 50% IGQM
3.8
--
V
14.0
--
V
14.0
--
V
--
-
40
-
A/
s
-
40
-
A/
s
+5V PSU current
500Hz, I
T = 3000A
GTO T
j= 125C
-15V PSU current
I
V3
-
10.0
A
-
V
1(Min)
+5V PSU minimum
+15V PSU minimum
V
3(Min)
-15V PSU minimum
I
FGM
Peak forward gate current
I
G(ON)
40
8
A
ELECTRICAL CHARACTERISTICS
Conditions
GDU 90-20301
Gate Drive Unit
Replaces March 1998 version, DS4562-4.1
DS4562-5.0 January 2000
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| GDU90-20302 | Gate Drive Unit |
| GDU90-20310 | Gate Drive Unit |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| GDU90-20302 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Drive Unit |
| GDU90-20310 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Drive Unit |
| GDU90-20421 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Drive Unit |
| GDU90-20422 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Drive Unit |
| GDU90-20721 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Drive Unit |
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