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參數(shù)資料
| 型號(hào)： | GCDA15C-1-GS08 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 靜電保護(hù)器 |
| 英文描述： | Low Capacitance Bidirectional ESD Protection Diodes |
| 中文描述： | 低電容雙向ESD保護(hù)二極管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | GCDA15C-1-GS08 |
www.vishay.com
2
Document Number 85856
Rev. 1.1, 19-Oct-04
GCDA15C-1
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Reverse stand-off voltage
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Test condition
Symbol
V
RWM
V
BR
I
R
C
D
V
C
Min
Typ.
Max
15
Unit
V
Reverse breakdown voltage
I
R
= 1 mA
V
RW
= 15 V
V
R
= 0 V, f = 1 MHz
I
PP
= 1 A, 8/20
μ
s waveform
(Fig. 4)
I
PP
= 8 A, 8/20
μ
s waveform
(Fig. 4)
16
V
Reverse leakage current
100
nA
Capacitance
5
pF
Clamping voltage
21
V
V
C
30
V
Figure 1. Typical Capacitance vs. Reverse Voltage
Figure 2. Typical Reverse Voltage vs. Reverse Current
0
1
2
3
4
5
6
7
0
5
10
15
18910
V
R
- Reverse Voltage (V)
C
D
f = 1 MHz
0
0.01
2
4
6
8
10
12
14
16
18
20
22
0.1
1
10
100
1000
V
-
I
R
- Reverse Current (
μ
A )
18911
R
Figure 3. Typical Clamping Voltage vs. Peak Pulse Current
Figure 4. Pulse Waveform 8/20
μ
s acc. IEC 61000 - 4 - 5
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
18912
I
PP
- Peak Pulse Current ( A )
V
C
0
25
50
75
100
125
150
0
5
10
15
Time (
μ
s )
20
25
30
35
18913
P
rise time
= 8
μ
s
50 % derating time
= 20
μ
s
I
100 % =
PP
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