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參數資料
| 型號： | GC509PLID |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 144K |
| 代理商： | GC509PLID |
2
510 - 70 - 3
R
L
= 1K
RB = 4.7
1
4
2
10
9
21K
R
FA =
56.2K
5
R
MIC
1kHz
3
2.7K
8
- A
C
S
1.0
1.0
- B
R
FB =
47.5K
7
6
R
E =
47.5
VOUT
1.3 VDC
0.015
1.0
R
S
3.3K
V
IN
S1
a
b
- C
R
E
Fig.1 Test Circuit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
VALUE / UNITS
Supply Voltage
5V DC
Power Dissipation
25 mW
Operating Temperature
-10
o
to + 40
o
C
-20
o
to + 70
o
C
Storage Temperature
5
10
1
6
CAUTION
CLASS 1 ESD SENSITIVITY
C OUT
R
E
B OUT
C IN
V
B
GND
B IN
A IN
V
MIC
A OUT
PIN CONNECTION
All resistors in ohms, all capacitors in Farads unless otherwise stated
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Amplifier Current
I
AMP
80
145
210
μ
A
Transducer Current
I
TRANS
R
E
=
∞
200
275
350
μ
A
Maximum Transducer Current
I
TRANS(MAX)
R
E
= 0
2
- - mA
Input Bias Current
I
BIAS
R
FA
= 1M, R
FB
= 1M
-50
0
50
nA
Input Referred Noise
IRN
NFB 0.2 to 10kHz at 12dB/Oct
-
1
2
μ
V
RMS
Harmonic Distortion
THD
S1 = b, V
OUT
= 500 mV
RMS
-
1
4
%
Voltage Gain
A
V
S1 = b, V
OUT
= 500 mV
RMS
70
73
76
dB
Stable with Battery Resistance
Resistance (R
B
) to:
Stability
R
B
= 22
-
-
22
Emitter Bias Voltage (Pin 8)
V
RE
-
55
-
mV
Microphone Resistance
R
MIC
3
4
5
k
On Chip Emitter Resistor
R
E
-
200
-
Preamp Current Drive Capability
I
OUT
-
30
-
μ
A
All switches remain as shown in Test Circuit unless otherwise stated in CONDITIONScolumn.
ELECTRICAL CHARACTERISTICS
Conditions: Frequency = 1 kHz, Temperature = 25
o
C, Supply Voltage = 1.3 VDC
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