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參數(shù)資料
| 型號： | GBPC2512W |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Diode Rectifier Bridge Single 1.2KV 25A 4-Pin Case GBPC-W |
| 中文描述： | Bridge Rectifiers 1200 Volt 25 Amp |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 135K |
| 代理商： | GBPC2512W |
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93575
Revision: 29-Sep-08
GBPC.. Series
Vishay High Power Products
Single Phase Bridge
(Power Modules), 25/35 A
ELECTRICAL SPECIFICATIONS
Note
(1)
See Ordering Information table at the end of datasheet
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK AC
REVERSE VOLTAGE
T
J
= T
J
MAXIMUM
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK AC REVERSE VOLTAGE
T
J
= T
J
MAXIMUM
V
I
RRM
MAXIMUM AT
RATED V
RRM
T
J
= T
J
MAXIMUM
mA
I
RRM
MAXIMUM
DC REVERSE
CURRENT AT
T
J
= 125 °C
μA
GBPC25/35..A
(1)
GBPC25/35..W
02
200
275
2
500
04
400
500
06
600
725
08
800
900
10
1000
1100
12
1200
1300
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
GBPC25 GBPC35
UNITS
Maximum DC output current
at case temperature
I
O
Resistive or inductive load
25
35
A
Capacitive load
20
28
60
55
°C
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 10 ms
No voltage
reapplied
Initial T
J
= T
J
maximum
400
475
A
t = 8.3 ms
420
500
t = 10 ms
100 % V
RRM
reapplied
335
400
t = 8.3 ms
350
420
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
790
1130
A
2
s
t = 8.3 ms
725
1030
t = 10 ms
100 % V
RRM
reapplied
560
800
t = 8.3 ms
512
730
Maximum I
2
√
t for fusing
I
2
√
t
I
2
t for time t
x
= I
2
√
t x
√
t
x
; 0.1
≤
t
x
≤
10 ms, V
RRM
= 0 V
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
maximum
(I >
π
x I
F(AV)
), T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
maximum
(I >
π
x I
F(AV)
), T
J
maximum
T
J
= 25 °C, I
FM
= I
Favg (arm)
T
J
= 25 °C, per diode at V
RRM
f = 50 Hz, t = 1 s
7.9
11.3
kA
2
√
s
Low level of threshold voltage
V
F(TO)1
V
F(TO)2
r
t1
0.76
0.77
V
High level of threshold voltage
0.89
0.92
Low level forward slope resistance
8.2
4.852
m
Ω
High level forward slope resistance
r
t2
V
FM
I
RRM
V
INS
6.8
3.867
Maximum forward voltage drop
1.1
V
Maximum DC reverse current
5.0
μA
RMS isolation voltage base plate
2700
V
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