- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385298 > GBPC2502W (VISHAY SEMICONDUCTORS) Diode Rectifier Bridge Single 200V 25A 4-Pin Case GBPC-W PDF資料下載
參數(shù)資料
| 型號： | GBPC2502W |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Diode Rectifier Bridge Single 200V 25A 4-Pin Case GBPC-W |
| 中文描述： | Bridge Rectifiers 200 Volt 25 Amp |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 135K |
| 代理商： | GBPC2502W |
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93575
Revision: 29-Sep-08
GBPC.. Series
Vishay High Power Products
Single Phase Bridge
(Power Modules), 25/35 A
ELECTRICAL SPECIFICATIONS
Note
(1)
See Ordering Information table at the end of datasheet
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK AC
REVERSE VOLTAGE
T
J
= T
J
MAXIMUM
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK AC REVERSE VOLTAGE
T
J
= T
J
MAXIMUM
V
I
RRM
MAXIMUM AT
RATED V
RRM
T
J
= T
J
MAXIMUM
mA
I
RRM
MAXIMUM
DC REVERSE
CURRENT AT
T
J
= 125 °C
μA
GBPC25/35..A
(1)
GBPC25/35..W
02
200
275
2
500
04
400
500
06
600
725
08
800
900
10
1000
1100
12
1200
1300
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
GBPC25 GBPC35
UNITS
Maximum DC output current
at case temperature
I
O
Resistive or inductive load
25
35
A
Capacitive load
20
28
60
55
°C
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 10 ms
No voltage
reapplied
Initial T
J
= T
J
maximum
400
475
A
t = 8.3 ms
420
500
t = 10 ms
100 % V
RRM
reapplied
335
400
t = 8.3 ms
350
420
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
790
1130
A
2
s
t = 8.3 ms
725
1030
t = 10 ms
100 % V
RRM
reapplied
560
800
t = 8.3 ms
512
730
Maximum I
2
√
t for fusing
I
2
√
t
I
2
t for time t
x
= I
2
√
t x
√
t
x
; 0.1
≤
t
x
≤
10 ms, V
RRM
= 0 V
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
maximum
(I >
π
x I
F(AV)
), T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
maximum
(I >
π
x I
F(AV)
), T
J
maximum
T
J
= 25 °C, I
FM
= I
Favg (arm)
T
J
= 25 °C, per diode at V
RRM
f = 50 Hz, t = 1 s
7.9
11.3
kA
2
√
s
Low level of threshold voltage
V
F(TO)1
V
F(TO)2
r
t1
0.76
0.77
V
High level of threshold voltage
0.89
0.92
Low level forward slope resistance
8.2
4.852
m
Ω
High level forward slope resistance
r
t2
V
FM
I
RRM
V
INS
6.8
3.867
Maximum forward voltage drop
1.1
V
Maximum DC reverse current
5.0
μA
RMS isolation voltage base plate
2700
V
相關PDF資料 |
PDF描述 |
|---|---|
| GBPC2512W | Diode Rectifier Bridge Single 1.2KV 25A 4-Pin Case GBPC-W |
| GBPC2512A | Diode Rectifier Bridge Single 1.2KV 25A 4-Pin Case GBPC-A |
| GBPC2508A | Diode Rectifier Bridge Single 800V 25A 4-Pin Case GBPC-A |
| GBPC2510A | DIODE 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC PACKAGE-4, Bridge Rectifier Diode |
| GBPC3510A | DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC PACKAGE-4, Bridge Rectifier Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GBPC25-02W | 制造商:Taitron Components Inc 功能描述: |
| GBPC2502W _B0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| GBPC2502W T0 | 制造商:SKMI/Taiwan 功能描述:Diode Rectifier Bridge Single 200V 25A 4-Pin Case GBPC-W Tray |
| GBPC2502W/1 | 功能描述:橋式整流器 25 Amp 200 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBPC2502W_Q | 功能描述:橋式整流器 25A Bridge Rectifier RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。