參數(shù)資料
型號： GB35XF120K
英文描述： GB35XF120K
中文描述： GB35XF120K
文件頁數(shù)： 2/11頁
文件大?。?/td> 213K
代理商： GB35XF120K
GB35XF120K
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
—
V
CE(on)
Collector-to-Emitter Voltage
2
www.irf.com
Ref.Fig
Ref.Fig
For UL Applications, T
J
is limited to +125°C (See File E78996).
Energy losses include "tail" and diode reverse recovery.
Min.
1200
Typ.
—
0.7
2.40
2.75
2.80
3.30
5.25
-11
5
500
1.90
2.15
2.00
2.35
—
Max. Units Conditions
—
V
V
GE
= 0V, I
C
= 500μA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-125°C)
2.60
V
I
C
= 35A, V
GE
= 15V
3.00
I
C
= 50A, V
GE
= 15V
—
I
C
= 35A, V
GE
= 15V, T
J
= 125°C
—
I
C
= 50A, V
GE
= 15V, T
J
= 125°C
6.0
V
CE
= V
GE
, I
C
= 250μA
—
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-125°C)
40
μA
V
GE
= 0V, V
CE
= 1200V
—
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
2.35
V
I
F
= 35A
2.65
I
F
= 50A
—
I
F
= 35A, T
J
= 125°C
—
I
F
= 50A, T
J
= 125°C
±200
nA
V
GE
= ±20V
—
—
—
—
4.0
—
—
—
—
—
—
—
—
1,2
3,4
V
GE(th)
V
GE(th)
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Zero Gate Voltage Collector Current
3,4
V
FM
Diode Forward Voltage Drop
16
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ.
255
25
125
2700
2500
5200
3750
3675
7425
50
35
415
230
3475
615
90
Max. Units
385
40
190
4075 I
C
= 35A, V
CC
= 600V
3775
μJ
V
GE
= 15V, R
G
= 10
, L = 400μH
7850
T
J
= 25°C
5450
I
C
= 35A, V
CC
= 600V
5100
μJ
V
GE
= 15V, R
G
= 10
, L = 400μH
10550
T
J
= 125°C
65
I
C
= 35A, V
CC
= 600V
50
ns
V
GE
= 15V, R
G
= 10
, L = 400μH
560
T
J
= 125°C
300
—
V
GE
= 0V
—
pF
V
CC
= 30V
—
f = 1Mhz
T
J
= 150°C, I
C
= 100A
R
G
= 10
, V
GE
= +15V to 0V
T
J
= 150°C
—
μs
V
CC
= 900V, V
P
= 1200V
R
G
= 10
, V
GE
= +15V to 0V
—
A
T
J
= 125°C
V
CC
= 600V, I
F
= 35A, L = 400μH
V
GE
= 15V, R
G
= 10
Conditions
I
C
= 35A
V
CC
= 600V
V
GE
= 15V
10
nC
CT1
CT4
5,7
CT4
WF1,2
6,8
CT4
WF1
WF2
9
CT2
14
CT3
SCSOA
Short Circuit Safe Operating Area
10
—
I
rr
Peak Reverse Recovery Current
—
73
17,18,19
CT4
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