參數(shù)資料
型號: GB15XF120K
廠商: VISHAY SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, ECONO26PACK-17, Insulated Gate BIP Transistor
中文描述: IGBT Modules 25 Amp 1200 Volt Non-Punch Through
文件頁數(shù): 6/8頁
文件大?。?/td> 284K
代理商: GB15XF120K
4.7
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0
200
400
600
800
1000
1200
diF /dt (A/μs)
0
10
20
30
IR
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= i
/
Ri
Ci=
i
/
Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
τ
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
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