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參數(shù)資料
| 型號(hào)： | GA4F4N |
| 廠商： | NEC Corp. |
| 英文描述： | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| 中文描述： | 電阻內(nèi)置型NPN晶體管 |
| 文件頁(yè)數(shù)： | 21/22頁(yè) |
| 文件大?。?/td> | 370K |
| 代理商： | GA4F4N |
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Data Sheet D16494EJ2V0DS
21
GA4xxx
[GA4L4K]
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
2
0
0
10
20
30
40
50
4
6
8
10
V
CE
- Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
I
B
= 250 A
200 A
150 A
μ
100 A
μ
50 A
V
C
0
0.1
0.2
0.3
0.4
0.5
0
5
10
15
20
25
30
35
40
V
IN
= 5.0 V
10.0 V
15.0 V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
h
F
1
10
100
1000
1
10
100
V
CE
= 5.0 V
T
A
= 75°C
25°C
25°C
I
C
- Collector Current - mA
V
C
0.01
0.1
1
1
10
100
I
C
= 10
I
B
T
A
= 75°C
25°C
25°C
I
C
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs. INPUT VOLTAGE
V
I
0.1
1
10
100
1
10
100
V
CE
= 0.2 V
T
A
= 75°C
25°C
25°C
I
C
- Collector Current - mA
I
C
μ
A
1
10
100
1000
1.8
2.2
2.6
3
3.4
3.8
4.2
4.6
V
CE
= 5.0 V
25°C
25°C
T
A
= 75°C
V
IN
- Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
R
0
10
20
30
40
50
60
-25
0
25
50
75
100
R
1
R
2
T
A
- Ambient Temperature - °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GA4F4Z | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| GA4L4L | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| GA4L4M | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| GALI-74 | Surface Mount Monolithic Amplifier 50з, High dynamic range, DC to 1 GHz |
| GAT-20 | Miniature Plastic Fixed Attenuators |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GA4F4N-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| GA4F4Z | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| GA4F4Z-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| GA4L3M | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| GA4L3M-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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