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參數資料
| 型號： | G6D-F4B |
| 廠商： | Omron Electronics LLC |
| 英文描述： | Easy-to-use, Space-saving Terminal Relay with Four-point Output |
| 中文描述： | 易于使用，節(jié)省空間與終端繼電器4點輸出 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | G6D-F4B |
G6D-F4B/G3DZ-F4B
G6D-F4B/G3DZ-F4B
3
Characteristics
Item
G6D-F4B
Relay output
Contact resistance (see note 2)
Must operate time (see note 3)
Release time (see note 3)
Insulation resistance
Dielectric strength
e ec
c s e g
100 m
max.
10 ms max.
10 ms max.
1,000 M
min. (at 500 VDC)
2,000 V
AC, 50/60 Hz for 1 min between coil and contacts.
750 V
AC, 50/60 Hz for 1 min between contacts of same polarity
4,000 V (1.2
50
μ
s)
Impulse withstand voltage (between
coil and contacts)
V
ibration resistance
Destruction:
10 to 55 Hz, 1.5-mm double amplitude
Malfunction:
10 to 55 Hz, 1.5-mm double amplitude
Destruction:
500 m/s
2
Malfunction:
100 m/s
2
Mechanical:
20,000,000 operations min. (at 18,000 operations/hr)
Electrical:
100,000 operations min. (3 A at 250 V
AC, resistive load)
100,000 operations min. (3 A at 30 VDC, resistive load) (at 1,800 operations /hr)
Operating: –25
°
C to 55
°
C (with no icing)
Storage:
–25
°
C to 55
°
C (with no icing)
Operating:
45% to 85%
Approx. 65 g
Shock resistance
S oc
es s a ce
Life expectancy
e e pec a cy
Ambient temperature
Ambient humidity
Weight
Note:
1.
The above values are initial values.
2.
Measurement condition: 1 A at 5 VDC
3.
Ambient temperature condition: 23
°
C
Item
G3DZ-F4B
Power MOS FET relay output
Must operate time
Release time
Output ON-resistance
Leakage current at OFF state
Insulation resistance
Dielectric strength
V
ibration resistance
Shock resistance
Ambient temperature
10 ms max.
15 ms max.
2.4
max.
10
μ
A max. (at 125 VDC)
100 M
min. (at 500 VDC)
2,000 V
AC, 50/60 Hz for 1 min between input and output terminals
10 to 55 Hz, 1.5-mm double amplitude
500 m/s
2
Operating: –25
°
C to 55
°
C (with no icing)
Storage:
–25
°
C to 55
°
C (with no icing)
Operating:
45% to 85%
Approx. 65 g
Ambient humidity
Weight
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相關代理商/技術參數 |
參數描述 |
|---|---|
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