參數(shù)資料
型號(hào)： G3VM-601BY
廠商： Omron Electronics LLC
英文描述： MOS FET Relay
中文描述： 場(chǎng)效應(yīng)晶體管繼電器
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 399K
代理商： G3VM-601BY
2
G3VM-601BY/EY
G3VM-601BY/EY
Specifications
I
Absolute Maximum Ratings (Ta = 25
°
C)
Note
The dielectric strength between I/O terminals was measured with voltage applied to pins 1, 2, and 3 together, and to pins 4, 5, and
6 together.
Connection Circuit Diagram
I
Electrical Performance (Ta = 25
°
C)
Note
The operate and release time were measured in the way shown below.
Item
Symbol
I
F
I
F
/
°
C
I
FP
V
R
Pin
T
J
V
OFF
Rating
Conditions
Input
LED forward current
50 mA
–
0.5 mA/
°
C
1 A
---
Ta
≥
25
°
C
100-μs pulses, 100 pps
LED forward current reduction rate
Repetitive peak LED forward current
LED reverse voltage
Permissible loss
Connection temperature
5 V
50 mW
125
°
C
600 V
100 mA
100 mA
200 mA
0.3 A
---
---
---
Output
Output dielectric strength
AC peak value
---
---
---
---
Continuous load cur-
rent
A connection
B connection
C connection
I
O
Peak load current
I
pead
P
out
Output loss
454 mW
–
1 mA/
°
C
–
1 mA/
°
C
–
2 mA/
°
C
504 mW
---
ON current reduction
rate
A connection
B connection
C connection
I
ON
/
°
C
Ta
≥
25
°
C
Total permissible loss
P
T
V
I
–
O
---
Dielectric strength between I/O terminals (See note.)
5,000 Vrms
AC, 1 min
V
S
= 500 V, ambient operating
humidity
≤
60%
---
---
Insulation resistance
R
I
–
O
5
×
10
10
Storage temperature
Ambient operating temperature
Tstg
Ta
–
55 to 125
°
C
–
40 to 85
°
C
Load
DC
1
2
3
6
5
4
A connection
1
2
3
6
5
4
DC
Load
B connection
1
2
3
6
5
4
DC
Load
C connection
Item
Symbol
V
F
I
R
C
T
Minimum
1.0 V
Standard
1.15 V
Maximum
1.3 V
Conditions
Input
LED forward current
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
ON
= 100 mA, I
F
= 10 mA
I
ON
= 100 mA, I
F
= 10 mA
I
ON
= 200 mA, I
F
= 10 mA
Reverse current
---
---
10 μA
Capacity between terminals
---
30 pF
22
17
8.5
---
35
27
13.5
Output
Maximum resis-
tance with out-
put ON
A connection
R
ON
---
B connection
---
C connection
---
Current leakage when the relay is
closed
Turn-ON time
I
LEAK
---
---
10 μA
V
OFF
= 600 V
T
ON
---
0.5 ms
1.5 ms
R
L
= 200
(See note.)
V
DD
= 20 V,
I
F
= 5 mA
V
S
= 0 V, f = 1 MHz
Turn-OFF time
T
OFF
---
0.1 ms
1.0 ms
Floating capacity between I/O terminals
C
I
–
O
---
0.8 pF
---
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