參數(shù)資料
型號(hào)： FZT857
廠商： ZETEX PLC
元件分類： 功率晶體管
英文描述： NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR
中文描述： 3.5 A, 300 V, NPN, Si, POWER TRANSISTOR
封裝： SOT-223, 4 PIN
文件頁數(shù)： 2/3頁
文件大?。?/td> 142K
代理商： FZT857
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
350
475
V
I
C
=100 A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
350
475
V
I
C
=1 A, RB 1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
350
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
50
1
nA
A
V
CB
=300V
V
CB
=300V,
T
amb
=100°C
Collector Cut-Off Current
I
R 1k
50
1
nA
A
V
CB
=300V
V
CB
=300V,
T
amb
=100°C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
100
155
230
345
mV
mV
mV
mV
I
C
=500mA, I
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=3.5A, I
B
=600mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1250
mV
I
C
=3.5A, I
B
=600mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.12
V
I
C
=3.5A, V
CE
=10V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
15
200
200
25
15
300
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
=10V*
I
C
=2A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
Transition Frequency
f
T
80
MHz
I
==100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
11
pF
V
CB
=20V, f=1MHz
Switching Times
t
on
t
off
100
5300
ns
ns
I
C
=250mA, I
B1
=25mA
I
B2
=25mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
FZT857
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FZT857TC 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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