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參數(shù)資料
| 型號： | FZT853 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS |
| 中文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 53K |
| 代理商： | FZT853 |
FZT851
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
150
220
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CER
150
220
V
I
C
=1
μ
A, RB
≤
1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
60
85
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
50
1
nA
μ
A
V
CB
=120V
V
CB
=120V,
T
amb
=100°C
V
CB
=120V
V
CB
=120V,
T
amb
=100°C
V
EB
=6V
I
C
=0.1A, I
=5mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=6A, I
B
=300mA*
I
C
=6A, I
B
=300mA*
Collector Cut-Off Current
I
CER
R
≤
1k
50
1
nA
μ
A
Emitter Cut-Off Current
I
EBO
V
CE(sat)
10
nA
Collector-Emitter Saturation
Voltage
50
100
170
375
mV
mV
mV
mV
Base-Emitter
Saturation Voltage
V
BE(sat)
1200
mV
Base-Emitter
Turn-On Voltage
V
BE(on)
1150
mV
I
C
=6A, V
CE
=1V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
75
25
200
200
120
50
300
I
C
=10mA, V
=1V
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
I
=100mA, V
CE
=10V
f=50MHz
Transition
Frequency
f
T
130
MHz
Output Capacitance
C
obo
t
on
t
off
45
pF
V
CB
=10V, f=1MHz
I
C
=1A, I
=100mA
I
B2
=100mA, V
CC
=10V
Switching Times
45
1100
ns
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 261
3 - 262
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZT853 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 |
| FZT853TA | 功能描述:兩極晶體管 - BJT NPN High Current RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT853TC | 功能描述:兩極晶體管 - BJT NPN High Current RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT855 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR |
| FZT855TA | 功能描述:兩極晶體管 - BJT NPN High Current RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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