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參數(shù)資料
| 型號： | FZT1151A |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | FZT1151A |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-45
-95
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
CES
-40
-90
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
CEO
-40
-85
V
I
C
=-10mA *
Collector-Emitter
Breakdown Voltage
V
CEV
-40
-90
V
I
C
=-100
μ
A, V
EB
=+1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-8.5
V
I
E
=-100
μ
A
Collector Cut-Off
Current
I
CBO
-0.3
-100
nA
V
CB
=-36V
Emitter Cut-Off Current I
EBO
-0.3
-100
nA
V
EB
=-4V
Collector Emitter
Cut-Off Current
I
CES
-0.3
-100
nA
V
CE
=-32V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-60
-120
-140
-170
-200
-90
-180
-220
-260
-300
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
=-5mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.8A, I
=-70mA*
I
C
=-3A, I
B
=-250mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-985
-1100
mV
I
C
=-3A, I
B
=-250mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-850
-1000
mV
I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
180
100
450
400
300
190
45
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
I
C
=-3A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
Transition Frequency
f
T
145
MHz
I
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
40
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
170
ns
I
C
=-2A, I
B
=-20mA,
V
CC
=-30V
t
off
460
ns
I
C
=-2A, I
B
=
±
20mA,
V
CC
=-30V
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%.
FZT1151A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZT1151A | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-223 |
| FZT115-1A10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| FZT115-1A15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| FZT115-1A25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| FZT1151ATA | 功能描述:兩極晶體管 - BJT PNP High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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