參數資料
型號: FZT1051
文件頁數: 2/3頁
文件大?。?/td> 46K
代理商: FZT1051
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
190
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
CES
150
190
V
I
C
=100
μ
A *
Collector-Emitter
Breakdown Voltage
V
CEO
40
60
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
190
V
I
C
=100
μ
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
9
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=120V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
V
CES
=120V
Collector-Emitter
Saturation Voltage
V
CE(sat)
17
85
140
250
25
120
180
340
mV
mV
mV
mV
I
C
=0.2A, I
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
= 20mA*
I
C
=5A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
980
1100
mV
I
C
=5A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
915
1000
mV
I
C
=5A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
290
270
130
40
440
450
220
55
1200
I
C
=10mA, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
155
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
27
40
pF
V
CB
=10V, f=1MHz
Turn-on Time
t
on
220
ns
I
C
=3A, I
B
=30mA, V
CC
=10V
Turn-off Time
t
off
540
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
FZT1051A
相關PDF資料
PDF描述
FZT1051A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT660
FZT660A
FZTA63 TRANSISTOR | BJT | DARLINGTON | PNP | 30V V(BR)CEO | 500MA I(C) | SOT-223
G0100RR Special Function Video Processor
相關代理商/技術參數
參數描述
FZT1051A 制造商:Diodes Incorporated 功能描述:
FZT1051ATA 功能描述:兩極晶體管 - BJT NPN High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT1051ATC 功能描述:兩極晶體管 - BJT NPN High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT1053 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT1053A 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, 75V, 4.5A, 2.5W, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:75V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:2.5W; DC Collector Current:4.5A; DC Current Gain hFE:450 ;RoHS Compliant: Yes