
Technische Information / Technical Information
FZ 1600 R 17 KF6 B2
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 1600A, V
CE
= 900V
V
GE
= ±15V, R
G
= 0,9
, T
vj
= 25°C
t
d,on
0,3
μs
V
GE
= ±15V, R
G
= 0,9
, T
vj
= 125°C
0,3
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 1600A, V
CE
= 900V
V
GE
= ±15V, R
G
= 0,9
, T
vj
= 25°C
t
r
0,19
μs
V
GE
= ±15V, R
G
= 0,9
, T
vj
= 125°C
0,19
μs
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 1600A, V
CE
= 900V
V
GE
= ±15V, R
G
= 0,9
, T
vj
= 25°C
t
d,off
1,2
μs
V
GE
= ±15V, R
G
= 0,9
, T
vj
= 125°C
1,2
μs
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 1600A, V
CE
= 900V
V
GE
= ±15V, R
G
= 0,9
, T
vj
= 25°C
t
f
0,15
μs
V
GE
= ±15V, R
G
= 0,9
, T
vj
= 125°C
0,16
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 1600A, V
CE
= 900V, V
GE
= 15V
R
G
= 0,9
, T
vj
= 125°C, L
S
= 50nH
E
on
430
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 1600A, V
CE
= 900V, V
GE
= 15V
R
G
= 0,9
, T
vj
= 125°C, L
S
= 50nH
E
off
670
mWs
Kurzschluverhalten
SC Data
t
P
≤
10μsec, V
GE
≤
15V
T
Vj
≤
125°C, V
CC
=1000V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
6400
A
Modulinduktivitt
stray inductance module
L
sCE
12
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
R
CC′+EE′
0,08
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 1600A, V
GE
= 0V, T
vj
= 25°C
V
F
2,1
2,5
V
I
F
= 1600A, V
GE
= 0V, T
vj
= 125°C
1,95
2,3
V
Rückstromspitze
peak reverse recovery current
I
F
= 1600A, - di
F
/dt = 9600A/μsec
V
R
= 900V, VGE = -10V, T
vj
= 25°C
I
RM
920
A
V
R
= 900V, VGE = -10V, T
vj
= 125°C
1350
A
Sperrverzgerungsladung
recovered charge
I
F
= 1600A, - di
F
/dt = 9600A/μsec
V
R
= 900V, VGE = -10V, T
vj
= 25°C
Q
r
220
μAs
V
R
= 900V, VGE = -10V, T
vj
= 125°C
460
μAs
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 1600A, - di
F
/dt = 9600A/μsec
V
R
= 900V, VGE = -10V, T
vj
= 25°C
E
rec
125
mWs
V
R
= 900V, VGE = -10V, T
vj
= 125°C
240
mWs
2(8)
FZ1600R17KF6B2