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參數(shù)資料
| 型號(hào)： | FZ100A06KL |
| 英文描述： | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 100A I(C) |
| 中文描述： | 晶體管| IGBT功率模塊|獨(dú)立| 600V的五（巴西）國(guó)際消費(fèi)電子展| 100號(hào)A一（c） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 116K |
| 代理商： | FZ100A06KL |
Technische Information / Technical Information
FZ 1000 R 25 KF1
IGBT-Module
IGBT-Modules
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
2500
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80 °C
I
C,nom.
1000
A
T
C
= 25 °C
I
C
1600
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
2000
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
10,4
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
1000
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
2000
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
400
kA
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 1000A, V
GE
= 15V, T
vj
= 25°C
V
CE sat
-
3,0
3,5
V
I
C
= 1000A, V
GE
= 15V, T
vj
= 125°C
-
3,8
4,3
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 80mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,3
5,3
6,3
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
-
18
-
μC
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
95
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
8
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 2500V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
-
20
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: Oliver Schilling
date of publication: 01.09.2001
approved by: Thomas Schütze
revision: 3
1
FZ101@3.xls
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