參數(shù)資料
型號(hào)： FY7BFH-02E
廠商： Mitsubishi Electric Corporation
英文描述： HIGH-SPEED SWITCHING USE
中文描述： 高速開關(guān)使用
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 72K
代理商： FY7BFH-02E
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
Sep. 2001
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
0
0.4
0.8
1.2
1.6
2.0
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
°
C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
V
GS
= 5V
4V
3V
P
D
= 1.6W
2.5V
2V
1.5V
T
C
= 25
°
C
Pulse Test
10
–
1
7
10
0
5
3
7
2
10
1
5
3
7
2
5
3
7
2
10
0
3
5 7
2
10
1
3
5 7
2
3
5
2
T
C
= 25
°
C
Single Pulse
100
μ
s
tw =
10
μ
s
1ms
10
ms
100
ms
DC
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
V
GS
= 5V
T
C
= 25
°
C
Pulse Test
2.5V
2V
4V
3V
P
D
= 1.6W
1.5V
PERFORMANCE CURVES
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
V
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
20
±
10
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
23
30
0.161
16
1400
520
400
30
100
190
190
0.85
—
50
—
—
±
10
0.1
1.3
30
40
0.210
—
—
—
—
—
—
—
—
1.1
78.1
—
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
I
G
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
10V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 7A, V
GS
= 4V
I
D
= 3.5A, V
GS
= 2.5V
I
D
= 7A, V
GS
= 4V
I
D
= 7A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 10V, I
D
= 3.5A, V
GS
= 4V, R
GEN
= R
GS
= 50
I
S
= 1.8A, V
GS
= 0V
Channel to ambient
I
S
= 1.8A, dis/dt =
–
50A/
μ
s
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