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參數(shù)資料
| 型號(hào)： | FXT458 |
| 廠(chǎng)商： | ZETEX PLC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 300 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, COMPATIBLE, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 26K |
| 代理商： | FXT458 |
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 SEPTEMBER 1994
FEATURES
*
400 Volt V
CEO
*
0.5 Amp continuous current
*
P
tot
= 1 Watt
REFER TO ZTX458 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
400
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
5
V
Continuous Collector Current
300
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
1
W
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
V
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
400
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=320V
Collector Cut-Off
Current
I
CES
100
nA
VCE=320V
Emitter Cut-Off Current
I
EBO
V
CE(sat)
100
nA
V
EB
=4V
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=6mA
I
C
=50mA, I
B
=5mA
Collector-Emitter
Saturation Voltage
0.2
0.5
V
V
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
Base-Emitter
Turn On Voltage
V
BE(on)
0.9
V
IC=50mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
I
=10mA, V
CE
=20V
f=20MHz
Transition Frequency
f
T
50
MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=20V, f=1MHz
E-Line
TO92 Compatible
3-35
FXT458
B
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