參數(shù)資料
型號: FX6ASJ-3
廠商: POWEREX INC
元件分類: JFETs
英文描述: Pch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 6 A, 150 V, P-CHANNEL, Si, POWER, MOSFET
封裝: COMPACT, MP-3, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 44K
代理商: FX6ASJ-3
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX6ASJ-3
HIGH-SPEED SWITCHING USE
–10
0
–10
1
–2 –3
–5 –7
–2 –3
–5 –7
–10
2
10
2
10
3
2
3
5
7
2
3
3
5
7
Ciss
Coss
Crss
T
C
h = 25°C
f = 1MH
Z
V
GS
= 0V
0
–10
–1
–2
0.2
0.4
0.6
0.8
1.0
–10
0
–3 –5–7
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
V
GS
= –4V
–10V
T
C
= 25°C
Pulse Test
–10
–1
–7
–10
0
–2 –3
–5 –7
–2 –3
–5 –7
10
0
2
3
5
7
10
1
2
3
5
7
2
T
C
= 25°C
75°C
125°C
V
DS
= –10V
Pulse Test
–10
–1
–7
–10
0
–2 –3
–5 –7
–2 –3
–5 –7
10
2
2
3
5
7
10
3
2
3
5
7
10
1
t
d(off)
t
d(on)
t
f
t
r
T
C
h = 25°C
V
DD
= –80V
V
GS
= –10V
R
GEN
= R
GS
= 50
0
–4
–8
–12
–16
–20
0
–2
–4
–6
–8
–10
–6A
–3A
I
D
= –12A
T
C
= 25°C
Pulse Test
0
–4
–8
–12
–16
–20
0
–2
–4
–6
–8
–10
T
C
= 25°C
V
DS
= –10V
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
相關(guān)PDF資料
PDF描述
FX6KMJ-06 HIGH-SPEED SWITCHING USE
FX6KMJ-06 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6KMJ-2 HIGH-SPEED SWITCHING USE
FX6KMJ-2 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6KMJ-3 HIGH-SPEED SWITCHING USE
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