參數(shù)資料
型號: FX6ASJ-2
廠商: POWEREX INC
元件分類: JFETs
英文描述: Pch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 6 A, 100 V, P-CHANNEL, Si, POWER, MOSFET
封裝: COMPACT, MP-3, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 45K
代理商: FX6ASJ-2
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50
0
50
100
150
V
GS
= –10V
I
D
= 1/2I
D
Pulse Test
0
–0.8
–1.6
–2.4
–3.2
–4.0
–50
0
50
100
150
V
DS
= –10V
I
D
= –1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
V
GS
= 0V
I
D
= –1mA
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
2 3 57
2 3 57
2 3 57
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0
–2
–4
–6
–8
–10
0
4
8
12
16
20
–20V
V
DS
=
–50V
–80V
Tch = 25°C
I
D
= –6A
0
–4
–8
–12
–16
–20
0
–0.4
–0.8
–1.2
–1.6
–2.0
T
C
=
25°C
75°C
V
GS
= 0V
Pulse Test
125°C
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
(
D
(
MITSUBISHI Pch POWER MOSFET
FX6ASJ-2
HIGH-SPEED SWITCHING USE
相關(guān)PDF資料
PDF描述
FX6ASJ-3 HIGH-SPEED SWITCHING USE
FX6ASJ-3 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6KMJ-06 HIGH-SPEED SWITCHING USE
FX6KMJ-06 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
FX6KMJ-2 HIGH-SPEED SWITCHING USE
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