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參數資料
| 型號： | FX6ASJ-06 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | ER 3C 3#16 PIN RECP LINE |
| 中文描述： | 高速開關使用 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | FX6ASJ-06 |
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–60
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.8
0.16
0.27
–0.48
4.9
1040
171
68
13
10
63
31
–1.0
—
50
—
±0.1
–0.1
–2.3
0.21
0.37
–0.63
—
—
—
—
—
—
—
—
–1.5
4.17
—
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= –1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –60V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –3A, V
GS
= –10V
I
D
= –3A, V
GS
= –4V
I
D
= –3A, V
GS
= –10V
I
D
= –3A, V
DS
= –5V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
V
DD
= –30V, I
D
= –3A, V
GS
= –10V, R
GEN
= R
GS
= 50
I
S
= –3A, V
GS
= 0V
Channel to case
I
S
= –6A, dis/dt = 100A/
μ
s
PERFORMANCE CURVES
0
8
16
24
32
40
0
200
50
100
150
0
–
4
–
8
–
12
–
16
–
20
0
–
1.0
–
2.0
–
3.0
–
4.0
–
5.0
P
D
= 30W
V
GS
=
–10V
Tc = 25°C
Pulse Test
–6V
–3V
–4V
–5V
–8V
0
–
2
–4
–6
–8
–10
0
–0.4
–0.8
–1.2
–1.6
–2.0
–6V
–4V
–5V
–3V
–8V
V
GS
= –10V
Tc = 25°C
Pulse Test
–10
–1
–10
0
–2
–3
–5
–7
–10
1
–2
–3
–5
–7
–10
0
–2
–10
1
–3 –5–7
–2
–10
2
–3 –5–7
–10
2
–2
–3
–5
–7
–2 –3 –5–7
–2
tw =
T
C
= 25°C
Single Pulse
100
μ
s
10ms
DC
1ms
10
μ
s
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
相關PDF資料 |
PDF描述 |
|---|---|
| FX6ASJ-06 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FX6ASJ-2 | HIGH-SPEED SWITCHING USE |
| FX6ASJ-2 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FX6ASJ-3 | HIGH-SPEED SWITCHING USE |
| FX6ASJ-3 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FX6ASJ-06-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
| FX6ASJ2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA |
| FX6ASJ-2 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH-SPEED SWITCHING USE |
| FX6ASJ-2-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
| FX6ASJ3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA |
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