參數(shù)資料
型號(hào): FX50SMJ-2
廠商: POWEREX INC
元件分類: JFETs
英文描述: Pch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 50 A, 100 V, P-CHANNEL, Si, POWER, MOSFET
封裝: COMPACT, TO-3P, 3 PIN
文件頁數(shù): 3/4頁
文件大小: 58K
代理商: FX50SMJ-2
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
0
–2
–4
–6
–8
–10
0
–2
–4
–6
–8
–10
I
D
= –100A
Tc = 25°C
Pulse Test
–50A
–25A
–10
0
–10
1
–2 –3
–5 –7
–10
2
–2 –3
–5 –7
10
10
1
2
3
5
7
10
2
2
3
5
7
T
C
=
25°C 75°C 125°C
V
DS
= –10V
Pulse Test
0
–10
0
20
40
60
80
100
–2
–10
1
–3
–5 –7
–2
–10
2
–3
–5 –7
V
GS
= –4V
Tc = 25°C
Pulse Test
–10V
0
–20
–40
–60
–80
–100
0
–2
–4
–6
–8
–10
Tc = 25°C
V
DS
= –10V
Pulse Test
10
3
3
5
7
–10
0
–3 –5–7
–10
2
–3
–2
–5–7
–10
1
–3
–2
–5–7
–3
–2
2
10
4
3
5
7
2
2
Ciss
Coss
Crss
Tch = 25°C
V
GS
= 0V
f = 1MH
Z
–10
1
–2 –3
–5 –7
–2 –3
–5 –7
–10
0
–7
10
2
2
3
5
7
10
3
2
2
3
5
7
t
d(on)
t
r
t
d(off)
t
f
Tch = 25°C
V
GS
= –10V
V
DD
= –50V
R
GEN
= R
GS
= 50
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
相關(guān)PDF資料
PDF描述
FX6ASJ-03-T13 High-Speed Switching Use Pch Power MOS FET
FX6ASJ-03 High-Speed Switching Use Pch Power MOS FET
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FX6ASJ-06 Pch POWER MOSFET HIGH-SPEED SWITCHING USE
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