- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375990 > FX3ASJ-3 (Mitsubishi Electric Corporation) HIGH-SPEED SWITCHING USE PDF資料下載
參數(shù)資料
| 型號： | FX3ASJ-3 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關(guān)使用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | FX3ASJ-3 |
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
–2
–3
–10
–1
–5
–7
–10
0
–2
–3
–5
–7
–10
1
–2
–3
–5
–7
–10
1
–2
–10
2
–3 –5–7
–2
–10
3
–3 –5–7
–2
–2 –3 –5–7
–2
tw = 10
μ
s
T
C
= 25°C
Single Pulse
100
μ
s
10ms
DC
1ms
0
–2
–4
–6
–8
–10
0
–4
–8
–12
–16
–20
Tc = 25°C
Pulse Test
P
D
= 30W
V
GS
= –10V
–4V
–3V
–5V
–6V
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–2
–4
–6
–8
–10
–6V
–4V
P
D
= 30W
V
GS
= –10V
–3V
–2.5V
–5V
Tc = 25°C
Pulse Test
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.93
1.02
–0.93
3.0
1170
81
31
9
7
82
33
–1.0
—
80
—
±
0.1
–0.1
–2.0
1.20
1.32
–1.20
—
—
—
—
—
—
—
—
–1.5
4.17
—
I
D
= –1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= –150V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –1A, V
GS
= –10V
I
D
= –1A, V
GS
= –4V
I
D
= –1A, V
GS
= –10V
I
D
= –1A, V
DS
= –5V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
V
DD
= –80V, I
D
= –1A, V
GS
= –10V, R
GEN
= R
GS
= 50
I
S
= –1A, V
GS
= 0V
Channel to case
I
S
= –3A, dis/dt = 100A/
μ
s
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FX3ASJ-3 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FX50KMJ-03 | HIGH-SPEED SWITCHING USE |
| FX50KMJ-03 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FX50KMJ-06 | HIGH-SPEED SWITCHING USE |
| FX50KMJ-06 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FX3ASJ-3-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
| FX3G-14MR-DS | 制造商:Mitsubishi Electric 功能描述:FX3G PLC 24Vdc, 8 In 6 Relay Out |
| FX3G-14MR-ES | 制造商:Mitsubishi Electric 功能描述:FX3G PLC 100-240Vac 8 In 24Vdc, 6 Out |
| FX3G-14MT-ESS | 制造商:Mitsubishi Electric 功能描述:FX3G PLC 100-240Vac 8 In 24Vdc, 6 Out |
| FX3G-1DA-BD | 制造商:Mitsubishi Electric 功能描述:FX3G PLC, 1 Analogue Output, 12bit |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。